NE85633-A

Series:	--
Packaging:	Strip
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1GHz
Gain:	11.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	--
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	--

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NE85633-A is a high-performance monolithic bipolar NPN rf transistor, especially designed for applications in the C- and ISM-Band. Ease of use, high reliability, consistent performance, and flat gain across the operating band, make NE85633-A an excellent component to design by. The NE85633-A is based on a bipolar transistor architecture. Bipolar transistors, commonly referred to as BJTs, are three-terminal devices that use a base-collector junction for conduction. BJTs are commonly used in the design of small-signal amplifiers, the core components of radio-frequency circuits.In the NE85633-A, the base-collector junction is formed by a junction field effect transistor (JFET) embedded in a monolithic structure. The JFET acts as a buffer to isolate the base electrode of the transistor from the collector voltage, allowing the transistor to operate with a low base-collector voltage, while still providing gain. This allows the NE85633-A to operate efficiently in a wide range of conditions, even at high frequencies.The remaining terminal of the transistor, the emitter, is connected to the source of power. As current flows through the base-collector junction, its voltage rises, which causes a current to flow through the emitter. This current is amplified by the transistor to produce an output signal.In applications such as C- and ISM-Band radios, the NE85633-A can be used as a low-noise, high-gain amplifier for producing a high-quality radio signal. Its ease of use, combined with its ability to produce a flat gain curve across the operating band, make it an ideal component for generating low-noise RF signals.The NE85633-A is a great choice for designers who are looking for a high-performance, low-noise BJT for their radio-frequency applications. Its monolithic structure, wide operating temperature range, and low-noise characteristics make the NE85633-A an excellent choice for any project requiring a high-quality, high-gain RF amplifier.

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