NE85630-R25-A

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The NE85630-R25-A is part of a class of transistors known as bipolar junction transistors (BJT). A bipolar junction transistor (BJT) is a semiconductor device that consists of three layers of semiconductor material, two N-type and one P-type layers which are sandwich together. It is categorized as a RF transistor due to its use of higher frequencies (above 1MHz) and its advanced design which made it suitable for use in advanced radio communication and other RF related circuits. The NE85630-R25-A is designed to be used in HF, VHF, and UHF relay switching circuits and other circuits requiring high current gains and wide bandwidth.

The NE85630-R25-A is a N-Channel BJT operated with a 25 to 50 Volts collector-emitter voltage range. Its average current gain is around 10 and its collector-emitter saturation voltage is around 0.25 Volts. Its power dissipation is about 500mW, with a collector current of 300mA and a collector-emitter voltage of 4V. Its switching time is around 15 nanoseconds.

The operating principle of the NE85630-R25-A is simple. When the base of the transistor is connected to a voltage source, a current flows into the base, generating minority carriers in the base region. This creates an electric field which attracts electrons from the emitter to the collector, resulting in a current flowing through the transistor. This current is measured as a voltage drop across the collector and emitter terminals, which is then amplified. When the base voltage is removed, the transistor is cut off and the current flow stops.

In the NE85630-R25-A application field, it can be used as an RF switching element in relay switching circuits, as well as for controlling power supplies, amplifiers, and audio circuits. It can also be used in filtering and transmission lines, as well as for pulse switching applications. The NE85630-R25-A has also been used in high-speed frequency division multiplexing circuits, where its switching speed and low operating voltage make it the preferred choice.

Overall, the NE85630-R25-A is a high-performance RF transistor that has wide applications due to its high current gains, small package size, and fast switching time. It is an ideal choice for designers looking for a reliable and cost-effective solution in their radio communication, power supply, and other RF related applications.

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