NE85633-T1B-R25-A Discrete Semiconductor Products |
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Allicdata Part #: | NE85633-T1B-R25-ATR-ND |
Manufacturer Part#: |
NE85633-T1B-R25-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-23 |
More Detail: | RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mou... |
DataSheet: | NE85633-T1B-R25-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
Gain: | 11.5dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Base Part Number: | NE85633 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NE85633-T1B-R25-A is a type of transistor used for RF applications. It is a bipolar junction transistor (BJT) designed specifically for high frequency and low noise applications. It is designed to be used in a wide variety of applications such as audio amplifiers, transmitters, and receivers. It is a small signal transistor, making it an ideal solution for applications requiring low power. The NE85633-T1B-R25-A is manufactured by a company called NTT ABLE.
A bipolar junction transistor is a type of electronic component which utilizes the modulation of a current in a single direction. This allows the transistor to switch between conducting and non-conducting states. The NE85633-T1B-R25-A utilizes this technology to act as an amplifier in order to increase the signal strength of the transmitted or received signal. The transistor uses a base-emitter-collector configuration in order to achieve this amplification. The base-emitter junction is used for the modulation of the current, where the base-collector junction is used for the amplification process.
The NE85633-T1B-R25-A has a maximum gain of 300MHz and an operating voltage of 25V. It also has an extremely low noise figure, making it extremely sensitive to noise in the environment. This makes it an ideal solution for applications such as microwave communication and wireless audio amplifiers, as the presence of minimal noise allows for the high quality reproduction of frequencies. The transistor also features a fast transition time between conducting and non-conducting states, making it well suited for applications requiring high speed and efficiency, such as receivers and transmitters.
The NE85633-T1B-R25-A is a reliable and cost effective solution for RF applications. Its fast transition time and low noise figure make it an ideal solution for applications requiring high sensitivity. Its small size also makes it a great choice for applications where space is at a premium, such as consumer electronics and automotive electronics.
In conclusion, the NE85633-T1B-R25-A is an ideal choice for RF applications because of its low noise figure, fast transition times, and relatively low cost. It is designed to be used in a wide variety of applications such as audio amplifiers, transmitters, receivers, and more. Its small size and low power consumption also make it a great choice for any application where space is at a premium.
The specific data is subject to PDF, and the above content is for reference
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NE85633-R24-A | CEL | 0.0 $ | 1000 | RF TRANSISTOR NPN SOT-23R... |
NE85633-R25-A | CEL | 0.0 $ | 1000 | RF TRANSISTOR NPN SOT-23R... |
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NE85633-T1B-R25-A | CEL | 0.0 $ | 1000 | RF TRANSISTOR NPN SOT-23R... |
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