Allicdata Part #: | NE85639-T1-R27-A-ND |
Manufacturer Part#: |
NE85639-T1-R27-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | SAME AS 2SC4093 NPN SILICON AMPL |
More Detail: | RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mou... |
DataSheet: | NE85639-T1-R27-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
Gain: | 13dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143 |
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The NE85639-T1-R27-A is a high-frequency bipolar junction transistor. It is often used in radio frequency amplification, radar electronics, cellular phones, and satellite navigation systems. The device is often used for high-frequency applications where large signal amplification is required. It offers a wide range of performance, from very low noise to high gain.
The NE85639-T1-R27-A works by bridging a junction between two oppositely doped regions. The resulting PN junction can be used to conduct current which is the source of the transistor\'s amplification. It is capable of producing a large signal gain, which can be extremely beneficial in radio frequency applications.
The NE85639-T1-R27-A also exhibits very low noise, which is ideal for communication systems. The large signal gain offered by this device allows it to effectively amplify small signals at high frequencies. It is commonly used in high-frequency oscillators, transmitters, receivers, and other transceiver components.
In addition to its wide range of performance, the NE85639-T1-R27-A has a high operating temperature. This makes it ideal for harsh environments and can provide long-term reliability. It can also be used in low-voltage applications, as it has a low cutoff frequency and low-power dissipation.
The NE85639-T1-R27-A is also highly reliable. Its robust construction and high-performance capabilities make it suitable for critical applications. It is often used in military and aerospace applications, as well as in medical and industrial systems.
In addition to the capabilities of the device, the NE85639-T1-R27-A also has a wide range of packages. It is available in a variety of SMD packages, plastic packaging, and ceramic packages to meet the needs of different applications.
The NE85639-T1-R27-A is a versatile and reliable device that is suitable for a wide range of applications. It offers a wide range of performance and a high operating temperature to satisfy the demands of critical applications. It also has a wide range of packages, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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