NE85634-T1 Allicdata Electronics
Allicdata Part #:

NE85634TR-ND

Manufacturer Part#:

NE85634-T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANS NPN 1GHZ SOT-89
More Detail: RF Transistor NPN 12V 100mA 6.5GHz 2W Surface Moun...
DataSheet: NE85634-T1 datasheetNE85634-T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: --
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Base Part Number: NE85634
Description

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NE85634-T1 is a three-pin, low-noise preamplifier (LNA) for use in low-frequency RF applications. It is a single-supply amplifier that draws an average of only 160 mA current from a +3.3 V supply. Due to its low current drain, the NE85634-T1 is suitable for handheld portable devices such as cellular phones, wireless communication equipment and digital video camcorders. The NE85634-T1 is also well-suited for use as a low-noise amplifier (LNA) in high-performance systems and applications such as communications and avionic systems, where its low-current drain can be beneficial.

The NE85634-T1 is a bipolar transistor that belongs to a family of transistors known as "RF transistors". These transistors are designed to operate in radio-frequency applications and are constructed using three main components. The primary component of an RF transistor is the base terminal. This terminal is usually connected to the base of the transistor, and it is responsible for controlling the flow of current through the transistor. This control is achieved by applying signals such as radio-frequency signals to the base of the transistor. Other components of the RF transistor are the emitter and collector terminals. The emitter and collector terminals are responsible for controlling the voltage drop across the transistor.

The NE85634-T1 also has an input and output impedance which can be adjusted for better performance. The amplifier has a gain of up to 20dB which allows for greater signal strength. The NE85634-T1 has a low noise figure of less than 0.9dB, which helps to reduce noise in the signal. This is beneficial for applications where low noise is desired such as in a hearing aide or when amplifying a weak signal.

The working principle of the NE85634-T1 is based on the bipolar transistor\'s current gain, which is the relationship between the current entering the base and the current exiting the collector. As current is applied to the base, the base-to-emitter voltage drop creates a slope on the transfer curve, increasing the gain of the output current. As the gain continues to increase, the output current will eventually reach a maximum value, known as the "saturation" point, where the transistor is unable to drive any more current through the collector. This is the point at which the transistor is said to be operating in its "saturation region". This allows the amplifier to operate with a more consistent output level over its full operating range.

The NE85634-T1 is a great choice for use in low-frequency RF applications due to its low-noise figure and its low-current drain. It has a wide frequency response and a high-input and output impedance which enable the user to make adjustments for better performance. Its gain of up to 20dB and its low noise figure make it an ideal choice for applications such as communications and avionics systems.

The specific data is subject to PDF, and the above content is for reference

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