NE85619-T1-A Discrete Semiconductor Products |
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| Allicdata Part #: | NE85619-ATR-ND |
| Manufacturer Part#: |
NE85619-T1-A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | CEL |
| Short Description: | RF TRANSISTOR NPN SOT-523 |
| More Detail: | RF Transistor NPN 12V 100mA 4.5GHz 100mW Surface M... |
| DataSheet: | NE85619-T1-A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 12V |
| Frequency - Transition: | 4.5GHz |
| Noise Figure (dB Typ @ f): | 1.2dB @ 1GHz |
| Gain: | 9dB |
| Power - Max: | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 7mA, 3V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-523 |
| Supplier Device Package: | SOT-523 |
| Base Part Number: | NE85619 |
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The NE85619-T1-A is a single transistor amplifier design that is specifically designed for RF applications. The amplifier is constructed using a BJT (Bipolar Junction Transistor) and features a low-noise gain of 40dB while operating within a frequency range of DC to 1GHz. It is rated for a 3V supply voltage, with a current consumption of 2mA when operating at 1GHz. This type of amplifier is widely used in high frequency, low-noise applications such as satellite communications, radio and television broadcasting, two-way radio communication, mobile communication, and many other areas.
The NE85619-T1-A uses a basic single transistor amplifier design, which consists of a single BJT in a common emitter configuration. In a common emitter configuration, the emitter is connected to the ground, the base is connected to the input signal, and the collector is connected to the output. This amplifier configuration has a relatively high voltage gain of typically around 60dB, and a power gain of around 40dB. The NE85619-T1-A features a low-noise gain of 40dB, making it ideal for high-frequency, low-noise applications.
The main advantage of the NE85619-T1-A is its high power gain. This allows for higher output power levels than would be achievable with traditional amplifier configurations. It is also designed to operate within a wide frequency range of DC to 1GHz. This feature makes it a great solution for many different types of applications, as the amplifier is capable of perfectly amplifying any input frequency within this range. Additionally, it is designed to operate at a low-noise level, making it ideal for applications where noise is an important consideration.
The main disadvantage of the NE85619-T1-A is its relatively high power consumption. When operating at 1GHz, it is rated for a current consumption of 2mA. This may be a problem in applications where power efficiency is a priority, such as hand-held devices or battery powered devices. Additionally, the amplifier is designed for a 3V supply voltage, which may be unsuitable for certain applications.
Overall, the NE85619-T1-A is a high performance, low-noise amplifier that is perfectly suited for applications that require high power and wide frequency range. Its low-noise gain, wide frequency range and high power gain make it a great choice for applications such as satellite communications, radio and television broadcasting, two-way radio communication, mobile communication, and many other areas. While it does have a relatively high power consumption, this should not be an issue for most types of applications.
The specific data is subject to PDF, and the above content is for reference
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NE85619-T1-A Datasheet/PDF