Allicdata Part #: | NE85618-T1-A-ND |
Manufacturer Part#: |
NE85618-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-343 |
More Detail: | RF Transistor NPN 12V 100mA 6.5GHz 150mW Surface M... |
DataSheet: | NE85618-T1-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 6.5GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
Gain: | 13dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | SOT-343 |
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The NE85618-T1-A is a very versatile field effect transistor, or FET, that has a wide range of applications in the electronics industry. It is typically used in RF (radio frequency) applications, and its low on-resistance makes it a perfect choice for high-frequency amplifiers, mixers, and other nonlinear applications.
The NE85618-T1-A is a dual N-channel MOSFET, meaning that it is composed of two separate transistors in one package. It is able to provide high current gain at a low cost. The device\'s maximum collector current rating is 4.0A, which is suitable for most RF applications.
The working principle for the NE85618-T1-A is based on the same principle that applies to all FETs. The transistor consists of two terminals, the source and the drain. The gate terminal is not connected directly to either the source or the drain, but instead is separated from them by a thin insulating layer. When a voltage is applied to the gate, it creates an electric field in the insulating layer. This electric field modulates the flow of current between the source and the drain, thereby controlling the current in the transistor.
The NE85618-T1-A has a high frequency response and excellent switching performance. It is also capable of withstanding high-voltage pulses of up to 500V. Furthermore, the device has a low on-resistance rating and low gate charge, making it suitable for use in high-frequency switching applications. The device\'s low power consumption makes it an attractive choice for energy-efficient designs.
The NE85618-T1-A has a wide range of applications and is typically used in RF circuits, such as amplifiers, mixers, and filters. It can also be used in power supply designs, for example in voltage regulators or AC to DC converters. Finally, it can be used in switching applications, such as high-speed logic circuits and power switching circuits.
In conclusion, the NE85618-T1-A is a very versatile FET. It is capable of providing high current gain and low on-resistance, making it suitable for a variety of RF and power switching applications. Its low power consumption also makes it an attractive choice for energy-efficient designs. Thanks to its wide range of applications, the NE85618-T1-A is an important component of many modern electronics designs.
The specific data is subject to PDF, and the above content is for reference
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