NE85639-T1-A Discrete Semiconductor Products

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NE85639-T1-A is a high-performance RF bipolar transistor with excellent high-frequency and excellent gain performance, small package size, and high-stability performance under the influence of various external conditions.

Application Field

NE85639-T1-A can be used in a variety of RF applications, and it is particularly suitable for wireless communication systems, rated output, and input in amplifier and oscillator applications, including RF amplifiers, HF-UHF transceivers, microwave systems, and more. NE85639-T1-A is suitable for sensitivity enhancement, capacity testing, transmitter and receiver, tracking, and other applications. They are used in the mobile radio frequency band, and the units of frequency up to several hundred megahertz, such as the PHS phones.

Working Principle

NE85639-T1-A Transistor is a three-terminal cross-coupled bipolar transistor with a high frequency response and high gain. In the NE85639-T1-A transistor, current flows through the base, allowing for a collector current increase. The collector current increase is due to the electrons generated from the base current that cross over to the collector. Thus, the voltage current for the collector increases, which creates amplification. This amplified current is then picked up by the emitter and is used as the output current.

The behavior of NE85639-T1-A can be summarized as the operating principle of a basic BJT transistor, which consists of three terminals: the emitter, the collector, and the base. A voltage (Vbe) applied between the base and emitter electrodes controls the current flow between the emitter and collector. The collector current is determined by the product of current gain (hfe) and the base current. The amplified output current (Ic) increases with the increase of base current (Ib). As a result, the transistor behaves as an amplifier which reacts to the voltage difference between its base and emitter and applies it to the collector for further amplification.

Conclusion

NE85639-T1-A is a three-terminal cross-coupled bipolar transistor with excellent high-frequency and gain performance, making it suitable for use in various RF applications. The device works by the operating principles of a BJT transistor, which allows it to respond to the voltage difference between the base and emitter and apply it to the collector for further amplification. This makes NE85639-T1-A a great choice for wireless communication systems, rated output, and input in amplifier and oscillator applications.

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