NTMS10P02R2G Discrete Semiconductor Products |
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Allicdata Part #: | NTMS10P02R2GOSTR-ND |
Manufacturer Part#: |
NTMS10P02R2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 8.8A 8-SOIC |
More Detail: | P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-... |
DataSheet: | NTMS10P02R2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3640pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMS10P02R2G is a type of single power MOSFET. This type of MOSFET is designed to be used primarily in DC and low-frequency AC applications. The power MOSFET is designed to be used in low current/high voltage loads, switching applications, and linear circuits. The NTMS10P02R2G is mainly used for power switching applications due to its low on-resistance, which allows for higher efficiency when it is used in a power circuit. The on-resistance can also be adjusted by changing the voltage to the gate of the device.
The NTMS10P02R2G is a N-channel MOSFET and is made with an advanced technology process that uses trench MOSFET structures for better heat dissipation. The NTMS10P02R2G requires a minimum gate drive voltage of 4.5V and is capable of handling a maximum current of 10A, making it suitable for a variety of DC and low-frequency AC applications. The gate-to-source turn-on voltage is 3V, while the gate-to source turn-off voltage is 0V, which ensures quick turn-on and turn-off response times. The NTMS10P02R2G also features an integrated anti-parallel diode, which protects the device from reverse voltages and helps to reduce electromagnetic interference.
The working principle of the NTMS10P02R2G is based on its single power MOSFET design. The gate of the MOSFET is connected to the source, the drain is connected to the power input, and the gate is connected to the control voltage. When the control voltage is applied to the gate, the channel between the source and the drain is created, and the current flows from the source to the drain. The current is controlled by the voltage of the control signal applied to the gate. When the control voltage is increased, the current increases as well.
The NTMS10P02R2G power MOSFET is mainly used in DC and low-frequency AC applications. It is used in switching applications such as motor control, solid-state relays, and in DC-DC converters. It is also used in linear applications such as low-noise DC circuits and audio amplifiers. The NTMS10P02R2G is a versatile power MOSFET that is suitable for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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