NTMS4176PR2G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMS4176PR2G is a single N-channel enhancement mode MOSFET. It is created for several applications that utilise semiconductor switched loads. This device is commonly integrated into switching circuits in power supplies and AC-DC converters. Additionally, the transistor is used in Smart Meter applications as well as in high-side switching and load switching etc.

This MOSFET is based on the advanced high performance CMOS process to offer superior switching performance. This process uses a Low Power Gate Dielectric and a high density Poly-Si Gate ensuring both high performance and low power usage. This device offers a wide operating temperature range of -40°C to +85°C.

The drain-source voltage of this transistor is equal to 4V. Its Gate-Source Voltage (Vgs) is equal to -4V to 7V. The Drain Current (continuously) for 2µs pulses at 10% duty cycle is equal to 16A. And the Gate Charge (typical) is equal to 30nC. It has an On-Resistance (typical) of 90mOhms. It features a maximum White Capacitance of 12.2Amps/Volt. ItsThreshold Voltage (typical) is equal to -3.5V.

This device is available in the TO-252 compact surface mount package. This transistor features very low levels of static parasitic drain-source capacitance and low gate threshold voltage to provide excellent fast switch performance. Its internal BVdss zener structure provides a good immunity to negative transient voltage.

This device also provides very low Gate charge and output capacitance. It also features a low RDS(on) at 4V and fast switching capabilities. In order to fabricate this MOSFET, an advanced power MOSFET process is used. This process is ideal for applications requiring superior switching performance.

The working principle of the NTMS4176PR2G is very simple. It is a depletion mode FET that operates with a negative Gate to Source voltage (Vgs). When the voltage applied between the Gate and Source is reduced, the MOSFET conducts current. This MOSFET will be misbehaved/damaged/destroyed if Gate-to-Source Voltage is increased beyond the stated voltages. This device is also able to switch between logic levels with low impedances.

The NTMS4176PR2G can be used in various applications. These include load switching, high-side switching and smart meter applications, as well as various power supplies, AC-DC converters and other switching circuits. This FET is also suitable for applications requiring fast switching performance due to its low gate threshold voltage and low output capacitance. This MOSFET also provides excellent transient immunity due to its internal BVdss zener structure.

In conclusion, the NTMS4176PR2G is a single N-channel enhancement mode MOSFET created for several applications that utilise semiconductor switched loads. It is based on an advanced high performance CMOS process, which provides superior switching performance, low power usage and wide operating temperatures. This FET is ideal for applications requiring low levels of static parasitic drain-source capacitance, low gate threshold voltage and fast switch performance. It is often used in load switching and other switching circuits, as well as in smart meter applications, power supplies, AC-DC converters and more.

The specific data is subject to PDF, and the above content is for reference