Allicdata Part #: | NTMS3P03R2GOS-ND |
Manufacturer Part#: |
NTMS3P03R2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 2.34A 8-SOIC |
More Detail: | P-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount ... |
DataSheet: | NTMS3P03R2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 730mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 3.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.34A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMS3P03R2G is a single monolithic trench MOSFET, which is developed for replication of an idealized MOSFET to guarantee high efficient performance and low power dissipation. This transitor type features an enhancement mode FET device with an internally-complemented, low on-resistance drainage and source, which is suitable for switching applications. The NTMS3P03R2G is specifically designed to provide increased driving power and optimization of efficiency.
The application field of the NTMS3P03R2G is to provide efficient, low power consumption and low on-resistance in switching applications. It is widely used in a variety of devices, such as motor control, computer, telephone, automotive and industrial control. The device can be used to control high-power devices, such as air-conditioning, lighting and heating.
The working principle of the NTMS3P03R2G is the transfer of electrical current from the source to the drain. The unique design of the trench MOSFET allows for an enhancement-mode operation with an inherently low on-resistance drain and source, as well as an internally-complemented, low on-resistance drain and source. This allows for increased driving power, optimized efficiency, and improved current handling with high efficiency. Additionally, due to its robust design and high switching speed, the NTMS3P03R2G is suitable for high-frequency use.
An additional benefit of the NTMS3P03R2G is its integrated trench MOSFET structure. This allows for a higher degree of integration, reducing the total size of the application and decreasing power loss. Additionally, the trench MOSFET structure provides improved device lifetime and reliability due to its increased heat dissipation and higher power handling capabilities.
In conclusion, the NTMS3P03R2G is an ideal choice for applications requiring efficient, low power consumption and low on-resistance in switching applications. This single monolithic trench MOSFET is designed to provide increased driving power and optimized efficiency with improved current handling. With its integrated trench MOSFET structure and robust design, the NTMS3P03R2G is suitable for operation in high-frequency applications, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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