NTMS4706NR2

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NTMS4706NR2 is a Silicon N-Channel MOSFET, designed for high voltage, high speed/power switching applications. It can be classified under Transistors-FETs, MOSFETs-Single.

The specification of the NTMS4706NR2 is asfollows: it has a rated drain-source breakdown voltage of 500V, with an absolute maximum of 600V. The Gate-Threshold voltage is below 4.5V, while the drain-source on resistance RDS(ON) is only 15 mΩ at 10V Gate-source voltage. It has a continuous drain current of 24A, with a maximum drain current of 33A. The input capacitance is 340 pF at 5 V, while output capacitance is 80 pF at 5V. It has a drain-source maximum Avalanche energy of 1.4mJ, with a maximum package power dissipation of 90W.

NTMS4706NR2 has a very wide application field. It can be used in variety of applications, such as premium power supply, server, industrial robotics, and so on. Due to its low on-resistance and high gate and breakdown voltage capability, the device is suitable for very high standard applications.

NTMS4706NR2 works on the principle of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is a three terminal device, with a source, drain, and gate, and composed of four layers, channel, oxide layer, gate and body. The oxide layer is actually a material made up of a number of atoms, stacked together into a lattice like structure, leaving small gaps in between single atom. These small gaps are called “charge carriers” and help in controlling the carriers’ flow in different directions.

The way NTMS4706NR2 works is by taking the Gate voltage and applying it across the oxide layer. This induces a positive charge on the drain side, allowing carriers to flow across the MOSFET, from source to drain and vice verse. The amount of charge depends on the Gate-Source voltage applied. With a low Gate-Source Voltage, the MOSFET acts as a resistor and can be used for low power switching applications such as signal conditioning and voltage control.

When the Gate-source Voltage increases, the switch becomes more conductive, allowing higher current to flow. At a certain Gate-Source Voltages, the device becomes near fully conductive and is known as the “tri-state”. This property enables NTMS4706NR2 to be used for high power applications such as driving heavy motors and lighting devices.

In addition, NTMS4706NR2 is equipped with a built in reverse polarity protection circuitry, which ensures that the device doesn’t short out even in case of an undesired polarity at the Gate. This results in increased reliability and safety, making this a high performance, robust and economical device for various applications.

Overall, NTMS4706NR2 is a Silicon N-Channel MOSFET, specifically designed for high voltage, high power switching applications. It is engineered with a low on resistance and high gate and breakdown voltage capabilities, resulting in a high performance and reliable switching device. Its wide array of applications includes high end power supplies, servers, and industrial robotics, among others. It works on the principle of MOSFET, which makes use of Gate-Source voltage to control the carriers’ flow. In addition, the device is equipped with built in reverse polarity protection, ensuring safe operation under all circumstances. Thanks to these impressive features, it is an ideal choice for users in need of efficient and reliable switching devices.

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