Allicdata Part #: | NTMSD3P102R2OS-ND |
Manufacturer Part#: |
NTMSD3P102R2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.34A 8-SOIC |
More Detail: | P-Channel 20V 2.34A (Ta) 730mW (Ta) Surface Mount ... |
DataSheet: | NTMSD3P102R2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 730mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 16V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 3.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.34A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMSD3P102R2 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a VDS Drain to Source Voltage range of 20V, a minimum Drain to Source Saturation (Vdsat) of 3V and an Id Current Drain Continuous at 100A. It is a single-gate device, meaning it has one gate electrode connected to the rest of the circuit. This type of transistor is commonly used in a variety of electronics devices with switching applications, such as precision motor control, circuit protection and gate drivers.
MOSFETs are commonly classified into two types based on their gate structure: linear and saturation. The linear type has a gate connected to both the Drain and the Source and can be referred to as an enhancement-mode device. The second type, the saturation type, has a gate connected to the Drain, but not the Source, and can be referred to as a depletion-mode device. The NTMSD3P102R2 is an enhancement-mode device, often referred to as an E-mode MOSFET.
MOSFETs are often used in power applications due to their low on-state resistance, which reduces conduction losses. This allows the device to switch large voltages and currents while dissipating a minimal amount of power, making power-electronic systems more efficient. The NTMSD3;102R2 has an rDSon of 0.015 Ohm, making it suitable for applications with large currents requiring minimal power losses.
The operation of the MOSFET is based on the use of a gate electrode that controls the conduction between the Source and the Drain. When a voltage is applied to the gate, it creates an electric field that attracts charge carriers from the Source to the Drain. This creates a channel, allowing current to flow from the Source to the Drain when the proper voltage is applied. The MOSFET can be used to control the flow of current by controlling the voltage applied to the gate. The higher the gate voltage, the larger the current that can be allowed to flow.
The NTMSD3P102R2 has several typical applications. It can be used as a switching device, with the gate voltage providing the control signal. It can be used in amplifier circuits to switch between two different sets of gain stages, allowing for a wider range of possible gains. It can also be used as a power switch in a power supply, with the desired channel being turned on or off depending on the gate voltage. It can also be used in DC-DC converters and inverters, which in turn can be used to control the speed of a motor or to provide a power supply for an LED.
In summary, the NTMSD3P102R2 is a single-gate N-Channel MOSFET with a VDS Drain to Source voltage of 20V, a minimum Drain to Source Saturation (Vdsat) of 3V, and an Id Current Drain Continuous at 100A. It is an E-mode device, with a low on-state resistance, making it suitable for applications with large currents and minimal power losses. It has several typical applications, such as being used as a switching device, an amplifier, a power switch, or in DC-DC converters and inverters.
The specific data is subject to PDF, and the above content is for reference
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