Allicdata Part #: | NTMS4404NR2OSTR-ND |
Manufacturer Part#: |
NTMS4404NR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 7A 8-SOIC |
More Detail: | N-Channel 30V 7A (Ta) 830mW (Ta) Surface Mount 8-S... |
DataSheet: | NTMS4404NR2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMS4404NR2 is an n-channel enhancement mode MOSFET transistor with an integrated Schottky Diode. It is designed for use in a wide range of applications including motor control, power management, voltage regulation, security and portable electronic device applications. The NTMS4404NR2 is available in a D-PAK (2x2.4mm) package, with an absolute maximum drain-source voltage rating of 44V, and a maximum drain current of 4A and a power dissipation rating of 42W.
The NTMS4404NR2 MOSFET is an enhancement-mode, vertical channel power MOSFET that offers low ON-resistance and low input capacitance. It is designed to switch ON and OFF quickly, with gate charge values that provide excellent switching speed performance. The device has a Schottky diode integrated into the package, which is used to clamp the drain voltage and reduce switching losses.
The NTMS4404NR2 features an ultra-low RDS(On) value, making it more efficient than other MOSFETs. It also has a low gate-source threshold voltage and extremely low gate-drain capacitance values, giving it improved switching performance. The device has a maximum voltage rating of 44V and a current rating of 4A. The device also has a high current density, enabling it to handle current levels up to 4A in a relatively small package.
In applications such as motor control, power management, voltage regulation and portable electronic devices, the NTMS4404NR2 can be used as a switch in the circuit. The device can be used to switch a power source on and off, regulate the voltage and current, and provide protection for the circuit. The device can also be used as a voltage stabilizer in power supplies and battery chargers.
The working principle of the NTMS4404NR2 MOSFET is simple. When its gate voltage is increased, a controlling current is generated at the gate electrode. This current flows through the channel, creating a channel between the source and the drain. This channel permits current to flow between the source and the drain, and this is how the device works.
In summary, the NTMS4404NR2 is an n-channel enhancement mode MOSFET transistor with an integrated Schottky Diode. It is available in a D-PAK package, with an absolute maximum drain-source voltage rating of 44V, and a maximum drain current of 4A and a power dissipation rating of 42W. The device has a low ON-resistance, a low gate-source threshold voltage and a low gate-drain capacitance, making it ideal for switching, voltage regulation and motor control applications. The device is also capable of handling current levels up to 4A, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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