Allicdata Part #: | NTMS3P03R2OS-ND |
Manufacturer Part#: |
NTMS3P03R2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 2.34A 8-SOIC |
More Detail: | P-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount ... |
DataSheet: | NTMS3P03R2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 730mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 3.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.34A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMS3P03R2 is a power MOSFET transistor which belongs to the NMOS3PxxR2 family. This transistor is mainly used for load switching , overload protection, and current sensing. This article will give an overview of its application fields and working principle.
Application Field : The NTMS3P03R2 power MOSFET has various application fields, but mainly used for simpler load switching, overload protection, and current sensing applications. They are also used in high side switching applications such as motor controllers, DC/DC converters, and Uninterruptible Power Supplies (UPS). Hence, by combining these different application fields, the NTMS3P03R2 power MOSFET offers a wide variety of applications to its users.
Working Principle: The NTMS3P03R2 power MOSFET is a voltage-controlled device which utilizes the resistivity of an oxide layer to perform its function. The dielectric oxide layer is formed between the gate and the source and drain junction which gives it its voltage control capability. When the gate receives enough voltage, the oxide layers become electrically charged and allow small current to flow through it. Since this transistor utilizes the resistivity of a dielectric oxide layer, it exhibits very low power dissipation.
The NTMS3P03R2 power MOSFET can be broken down into three main components; the drain, the gate, and the source. The drain and source are connected together through the oxide layer and the gate is connected to the oxide layer. The gate voltage controls the current flowing through the device due to the resistivity of the oxide layer. Generally, the larger the gate voltage, the greater the current flow.
The NTMS3P03R2 transistor is ideal for simple load switching, overload protection, and current sensing applications due to its low power dissipation and high current capacity. It is also suitable for high side switching applications such as motor controllers, DC/DC converters, and Uninterruptible Power Supplies (UPS). The NTMS3P03R2 offers a voltage control which can be used for load switching, over current protection, current regulation, and low voltage breakdown protection.
In conclusion, the NTMS3P03R2 power MOSFET is a reliable and efficient transistor which offers a wide variety of practical applications such as load switching, over current protection, current regulation, low voltage breakdown protection, motor controllers, and Uninterruptible Power Supplies (UPS). It employs the use of a dielectric oxide layer which allows for control of its current flow. Furthermore, the NTMS3P03R2 offers low power dissipation and large current capacity, making it a suitable choice for various applications. Thus, the NTMS3P03R2 power MOSFET is a versatile and reliable choice for load switching, overload protection and current sensing applications.
The specific data is subject to PDF, and the above content is for reference
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