Allicdata Part #: | NTMS4706NR2G-ND |
Manufacturer Part#: |
NTMS4706NR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6.4A 8-SOIC |
More Detail: | N-Channel 30V 6.4A (Ta) 830mW (Ta) Surface Mount 8... |
DataSheet: | NTMS4706NR2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMS4706NR2G transistor is a N-channel Enhancement Mode MOSFET. It is a high power transistor, with maximum drain current of 40A in TO220AB package and maximum drain current of 70A in D²pak package. It belongs to the category of transistors known as Field Effect Transistors (FETs). FETs are transistors composed of a source, drain, and gate. Within this category, NTMS4706NR2G is known as a single MOSFET, since it has only one source, drain, and gate.
The source of the NTMS4706NR2G is the negative terminal and the drain is the positive terminal. The gate is what controls the flow of current between the source and the drain. When a small voltage is applied to the gate, it creates an electric field that causes an internal change in the properties of the transistor. Depending on the applied voltage, this electric field can cause the transistor to be either open or closed, in other words completely conducting or completely non-conducting.
The application fields of NTMS4706NR2G are varied, and the transistor is used in a wide range of applications, mainly due to its high resistance and high power performance. NTMS4706NR2G is commonly used in switches, power supplies, battery management systems, automotive applications, and commercial and consumer electronics, such as smartphones and computers. As a high power switching device, the transistor is mainly used to switch high current and power applications.
The NTMS4706NR2G has a relatively low gate threshold voltage, typically of -2.5V. This low threshold voltage means that NTMS4706NR2G is capable of switching smaller voltage signals, making it a very versatile device. Moreover, the on-state resistance of the NTMS4706NR2G is typically of 0.05 ohm in TO220AB package and 0.04 ohm in the D²pak package, with a maximum drain-source voltage of 500V.
In conclusion, the NTMS4706NR2G is a single transistor MOSFET with a wide range of applications, mainly due to its high power performance, low gate threshold voltage and low on-state resistance. It is mainly used in applications such as switches, power supplies, battery management systems, automotive applications, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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