NTMS4107NR2G Discrete Semiconductor Products |
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Allicdata Part #: | NTMS4107NR2GOSTR-ND |
Manufacturer Part#: |
NTMS4107NR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11A 8-SOIC |
More Detail: | N-Channel 30V 11A (Ta) 930mW (Ta) Surface Mount 8-... |
DataSheet: | NTMS4107NR2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 930mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTMS4107NR2G is a N-type metal oxide semiconductor field effect transistor. Such transistors are used in a range of applications due to their precise control of current. This type of transistor is known for its low cost and reliable performance. One of the main properties of the NTMS4107NR2G is its high current driving capabilities. It is capable of providing more than 6A of continuous current and more than 10A of pulsed current. This makes it suitable for a variety of power applications, including audio amplifiers and digital circuits. In addition, its low on-resistance offers excellent joint management, which makes it ideal for applications that require high switching performance.The NTMS4107NR2G also has an integrated diode for protection against inductive loads. This makes it an excellent choice for applications that require protection against voltage spikes.In order to understand how the NTMS4107NR2G works, it is necessary to understand the basic principles of field effect transistors. A field effect transistor is composed of a source and a drain. When a positive voltage is applied to the gate of the device, an electric field is created between the source and the drain, allowing current to flow. By controlling the amount of voltage applied to the gate, the current through the transistor can be varied.In addition to its current driving capabilities, the NTMS4107NR2G also offers excellent thermal management and noise reduction. The device is designed to operate with a maximum temperature of 175°C, making it suitable for projects with limited cooling capacity. It also has an integrated ESD protection structure and low noise levels, making it an excellent choice for audio applications.The NTMS4107NR2G is a versatile device that has a wide range of applications. It is a great choice for projects requiring high current driving capabilities, as well as for audio applications. Its low cost, reliable performance, and integrated diode protection make it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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