Allicdata Part #: | NTMS4800NR2G-ND |
Manufacturer Part#: |
NTMS4800NR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 4.9A 8-SOIC |
More Detail: | N-Channel 30V 4.9A (Ta) 750mW (Ta) Surface Mount 8... |
DataSheet: | NTMS4800NR2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMS4800NR2G is a single N channel, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that works on a logic level of only 0.5 V, making it a popular choice for switching power control in low voltage applications. With an on-state resistance of typically 8 mohms, this MOSFET offers an ideal combination of low power consumption and high switching speed, as well as an extremely low threshold voltage. It is also rated for 30V and can handle currents up to 2 A.
NTMS4800NR2G is used in many applications where its specific combination of isolation, low on-state resistance and simple bi-directional control makes it the ideal switch for the task. Among these applications are various digital audio, video, and communications products; automotive electronics; and industrial, medical, and consumer devices.
The working principle of the NTMS4800NR2G is based on the technology of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The MOSFET is a voltage-driven device, so it uses electric fields to control current instead of electrical current directly. The NTMS4800NR2G is composed of a number of gate regions and several N type layers, which are the other two components that make up the device.
In operation, the gate region is used to control the conductivity of the N type regions. The gate voltage determines whether the N type regions are conducting or not; if the gate voltage is above the threshold voltage of the device, then the N type regions are conducting, allowing current to flow between the source and the drain. The source is held at a constant voltage and the drain current is kept low in order to maintain the high on-state resistance of the device. When the gate voltage is decreased, the N type regions become non-conducting and no current is drawn from the source.
The NTMS4800NR2G is an excellent choice for many low voltage applications due to its combination of low on-state resistance and its low threshold voltage. Its wide range of applications makes it a versatile device, and its high level of integration ensures it is a viable choice for many industrial, automotive, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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