NTMS5835NLR2G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMS5835NLR2G transistor is a high voltage, dual-gate MOSFET device from Vishay’s N-Channel PowerTrench family. This device has a low on-resistance and high power dissipation, making it suitable for high efficiency DC-DC converters and power management applications in consumer, computer, and industrial applications. This article will discuss the application field and working principle of the NTMS5835NLR2G.

The NTMS5835NLR2G is a high efficiency, low on-resistance device designed for high speed switching and high power management applications. It offers a wide range of features, such as low gate leakage and low threshold voltage, high voltage and current rating, fast switching times and low power consumption. The NTMS5835NLR2G can be used in a variety of applications, including DC-DC converters, power management ICs, power supplies, displays, and embedded controllers.

The NTMS5835NLR2G has a low on-resistance and high power dissipation, making it suitable for high efficiency DC-DC converters, meaning it is suitable for delivering high power over a wide voltage range. With its low RDS(on) and low threshold voltage, it is also suitable for connecting multiple power sources, reducing the need for a dedicated power distribution. This makes it an ideal device for power management ICs, allowing them to accurately control their efficiency and performance.

It has a very low gate capacitance and a fast switching time, making it suitable for high speed switching applications such as in embedded controllers or displays. This device can be used to switch between different gain and drive levels, providing greater control over the output. It can also be used to accurately switch between different current levels, making it highly efficient in power management applications.

The NTMS5835NLR2G is a high voltage, dual-gate MOSFET device. The dual gates allow for increased stability in operational environments. The device has been designed to withstand high voltages and current ratings, making it suitable for a wide range of applications. It also has a low gate leakage, making it suitable for applications where low power consumption is a priority.

The NTMS5835NLR2G is a reliable, high voltage, dual-gate MOSFET device that is suitable for a wide range of applications. It has low gate capacitance and a fast switching time, making it suitable for high speed switching and power management applications. Its low on-resistance and high power dissipation make it suitable for high efficiency DC-DC converters. Its dual gates make it suitable for operational environments with greater stability and its low gate leakage makes it suitable for applications that require low power consumption.

The specific data is subject to PDF, and the above content is for reference