Allicdata Part #: | NTMS4700NR2GOS-ND |
Manufacturer Part#: |
NTMS4700NR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 8.6A 8-SOIC |
More Detail: | N-Channel 30V 8.6A (Ta) 860mW (Ta) Surface Mount 8... |
DataSheet: | NTMS4700NR2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 860mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMS4700NR2G is one of the best single-gate field effect transistors (FETs) currently available on the market. It is a high-speed and low-cost MOSFET that can be used in various applications. This article will discuss the application field and working principle of the NTMS4700NR2G.
The NTMS4700NR2G is a single-gate, MOSFET-based, enhancement-mode FET. It is ideal for use in a wide range of digital and analog applications, such as audio amplification, power management, and motor control. The device has a low on-state resistance (RDSON) and a low gate charge. As such, it can provide a high degree of efficiency and power saving in applications with high currents and high-frequency switching.
The NTMS4700NR2G is fabricated using advanced nanometer-scale semiconductor processes, giving it excellent features such as low power consumption, low noise, and high switching speed. This makes it highly suitable for use in high-speed communications, motor control, and automotive electronic systems.
The NTMS4700NR2G\'s working principle is based on the basic principle of field-effect transistors (FETs). FETs are three-terminal semiconductor devices whose current flow is controlled by the voltage applied to a gate terminal. The gate terminal determines the resistance between the source and drain terminals. This resistance can be varied, depending on the magnitude of the gate voltage, resulting in the FET being used as a switch or amplifier.
The NTMS4700NR2G has a single-gate design, which allows for precise control of the FET\'s drain current using the gate voltage. A slight adjustment in the gate voltage can cause a large change in the current, which makes the NTMS4700NR2G highly suitable for use in applications with high switching speed.
The NTMS4700NR2G also has a low on-state resistance, or RDSON, which is important for applications such as audio amplifiers, power management, and motor control. A low RDSON reduces energy losses in the FET, resulting in more efficient operation.
The NTMS4700NR2G is an excellent choice for a wide range of applications. Its high efficiency and power-saving features make it ideal for use in high-frequency switching and power management applications. Its low RDSON and precise control make it a great choice for audio amplification, motor control, and automotive electronic systems.
The specific data is subject to PDF, and the above content is for reference
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