NTMS5P02R2SG Discrete Semiconductor Products

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NTMS5P02R2SG is a single N-channel Enhancement Mode Power MOSFET. This MOSFET is meant to be used in power amplifier design in mobile and wireless applications, as it is small-signal, low-power and capable of low on-state resistance.

The NTMS5P02R2SG package includes a transistor in a TO-252 package. The transistor is capable of providing up to 11.6A of Load Current and a maximum Drain-Source voltage of 20V. It supports drain-source voltage of 22V and drain-gate voltage of 12V. It has low on-resistance of 0.4Ohm with 0.4V Gate-Source Voltage and 4.8A load current.

This MOSFET is made from semiconductor materials. Its core consists of an N-Channel vertical p-type power MOSFET and a bypass capacitor that helps to minimize feedback when the power MOSFET is switched ON and OFF. The drain-source voltage is applied across the MOSFET, while the gate-source voltage is used to control the current flow across the MOSFET.

The MOSFET works on the principle of majority carrier injection. When a voltage difference is applied between the Drain and Source, the majority carrier (electrons) get injected into the channel formed by the N-channel. This creates electron-hole pairs in the p-type power MOSFET, which in turn conduct the current. The intensity of the current is determined by the Gate-Source voltage. When the Gate-Source voltage is increased, the majority carriers are attracted to the Gate and injected in the channel. This increases the current flow, thereby increasing the voltage drop across the Drain-Source, due to which the MOSFET is said to be ON.

The NTMS5P02R2SG MOSFET is a powerful device that is widely used in portable consumer electronics, such as mobile phones, digital cameras, portable game consoles and media players. It is also used in automotive electronics and other consumer electronic products, such as LED lighting, LED displays, and portable audio/video players.

The device is also widely used for power amplifier design applications in portable consumer electronics, such as RF and high-end audio amplifiers. In such cases, it is used as the output transistors in the amplifier circuits. The high current and low on-resistance capability of the MOSFET make it ideal for such applications.

In conclusion, the NTMS5P02R2SG is a powerful single N-channel Enhancement Mode Power MOSFET that is widely used in power amplifier design in mobile and wireless applications.

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