NTMS10P02R2 Discrete Semiconductor Products |
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Allicdata Part #: | NTMS10P02R2OSTR-ND |
Manufacturer Part#: |
NTMS10P02R2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 8.8A 8-SOIC |
More Detail: | P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-... |
DataSheet: | NTMS10P02R2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3640pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMS10P02R2 is an N-channel power MOSFET (power metal oxide semiconductor field effect transistor) that is designed for high power applications. It is a versatile device that can be used in many different circuits, ranging from high-speed switching, low-noise amplification, to EMI/RFI filtering. This article will describe the application field and working principle of NTMS10P02R2.
Application Field
NTMS10P02R2 is a general-purpose device that can be used in a wide range of circuits, such as switching power supply (SMPSs) for ATX PCs, switching converters, power inverters, and motor drives. It is also widely used in audio amplifiers and EMI/RFI filters. It has low on-state resistance and excellent thermal characteristics, which makes it suitable for use in high power applications. In addition, its high switching speed further expands its scope of applications.
Working Principle
The working principle of NTMS10P02R2 is based on the concept of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of field effect transistor that has three electrodes – the source (S), the drain (D), and the gate (G). The source is connected to the negative terminal of the power source, the drain is connected to the positive terminal, and the gate is controlled by the impulses supplied by the driver. When a positive voltage is applied to the gate, it will attract the electrons in the source region, causing them to flow through the channel, thus establishing an electrical connection between the source and the drain.
The NTMS10P02R2 has an on-state resistance of 0.7mΩ, which makes it highly efficient and power-efficient. It also has high switching speed (30V/µs) and low reverse transfer capacitance (Coss). The high switching speed and low reverse transfer capacitance make the device suitable for high frequency and low EMI/RFI applications.
In summary, NTMS10P02R2 is a versatile and powerful N-Channel MOSFET, suitable for a wide range of applications from switching power supply, switching converters, power inverters, and motor drives to audio amplifiers and EMI/RFI filters. Its low on-state resistance, high switching speed, and low reverse transfer capacitance are some of the key features that make it a preferred choice for many designers.
The specific data is subject to PDF, and the above content is for reference
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