NTMS4840NR2G Allicdata Electronics
Allicdata Part #:

NTMS4840NR2G-ND

Manufacturer Part#:

NTMS4840NR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 4.5A 8SOIC
More Detail: N-Channel 30V 4.5A (Ta) 680mW (Ta) Surface Mount 8...
DataSheet: NTMS4840NR2G datasheetNTMS4840NR2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 680mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTMS4840NR2G is usually classified as "Transistors - FETs, MOSFETs - Single". It is a normally-on, N-Channel MOSFET, commonly used in power management applications. The NTMS4840NR2G MOSFET is a type of MOSFET that offers fast switching and is well-suited for moderately high-power applications. It is used in various power rails, such as DC/DC converters, battery backup, and inverters. It is also used in consumer electronics, motor control, and other power management applications.The NTMS4840NR2G MOSFET is a two-terminal device: the drain (D) and gate (G). When the gate connects to a positive voltage, electrons are attracted to the gate, creating an inversion layer. This inversion layer is a conductive channel underneath the gate, connecting the drain to the source (S). When this channel is present, the transistor is said to be "on".The drain is the part of the MOSFET where current flows through when the transistor is on, and the gate is the part that acts as a switch. When the gate voltage is positive, the channel will form, allowing electrons to flow through the transistor. When the gate voltage is zero or negative, the channel will not form, and the current will be blocked.The working principle behind NTMS4840NR2G is simple: when the gate voltage is positive, the channel forms and allows current to flow. When the gate voltage is negative, the channel collapses, blocking the current. The voltage required to turn the transistor on and off can vary depending on the type of MOSFET and the current the transistor will be switching. Generally, MOSFETs need at least 0.7 Volts applied to the gate to turn the transistor on.NTMS4840NR2G is a great choice for applications that require a high current capacity and fast turn-off times. The fast switching speeds of the transistor make it well-suited for consumer electronics and other high-speed applications. Additionally, as the transistor is normally-on, it requires very little power consumption to keep the transistor in the on state, making it a great choice for energy efficient applications. All in all, NTMS4840NR2G is an excellent choice for high power applications that require low currents, fast switching speeds, and low power consumption. As long as the transistor is correctly matched for the application, the NTMS4840NR2G will provide reliable switching performance for many years to come.

The specific data is subject to PDF, and the above content is for reference

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