Allicdata Part #: | NTMSD3P102R2SG-ND |
Manufacturer Part#: |
NTMSD3P102R2SG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.34A 8-SOIC |
More Detail: | P-Channel 20V 2.34A (Ta) 730mW (Ta) Surface Mount ... |
DataSheet: | NTMSD3P102R2SG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | 730mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 16V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 3.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.34A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMSD3P102R2SG is a N-channel, surface mount, depletion-mode JFET transistor. This device is widely used across a wide range of applications, including consumer electronics and industrial automation. The NTMSD3P102R2SG offers the benefits of low power consumption, low voltage operation, and faster switching times compared to conventional bipolar transistors.
The NTMSD3P102R2SG is a depletion-mode, field effect transistor (FET), consisting of an N-channel, metal oxide semiconductor, FET (MOSFET), also known as a single junction FET (SJFET). Being a depletion-mode, FET the transistor conducts current when no electric potential is applied to its gate terminal. This makes the device useful in applications that require signals with low thresholds and can be used to heavily attenuate a signal when biased in its "OFF" state.
The greatest benefit of the NTMSD3P102R2SG is its low voltage, low power operation; it can operate from a single DC power rail as low as 2 Volts. The device can switching high loads (several amperes) at very high speeds, making it ideal for high-speed, low voltage switching circuits. When coupled with an external gate bias, the device can turn OFF or ON in a fraction of the time required by a bipolar transistor. This makes the NTMSD3P102R2SG well suited for applications demanding high speed, low power switching.
Typical applications of the NTMSD3P102R2SG include switching/level shifting circuits, analog switches, battery management, motor control, and voltage converters. The device can be used in combination with complementary devices, such as N-channel MOSFETs, to form complimentary switching pairs in motor driver ICs, analog switches, etc. The device can also be used in battery charger and management circuits as a highly efficient switch. Furthermore, voltage converter circuits such as charge-pumps and power-factor-correctors often use depletion-mode FETs, such as the NTMSD3P102R2SG, to provide low resistance switching.
In conclusion, the NTMSD3P102R2SG depletion-mode JFET transistor provides several key benefits across a wide range of applications. These benefits include low power operation, fast switching, and high current carrying capacity. The NTMSD3P102R2SG is a useful device for applications such as motor control, battery management, analog switches, and voltage converters.
The specific data is subject to PDF, and the above content is for reference
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