NTMS4935NR2G

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A NTM4935NR2G is an n-channel enhancement mode gallium arsenide field-effect transistor (FET) or MOSFET. It is an N-channel transistor with a withstand voltage of 175V and a drain-source on-resistance rating of 2.4 Ohms. It is commonly used for linear power supply and control applications where low drain-source on-resistance, low gate threshold, and low noise are important considerations. The NTM4935NR2G is capable of operating over a wide range of drain-source voltage from -20V to 175V. It is suitable for both analog and digital applications. The device is designed for use in a wide variety of power management and control applications such as DC-DC converters, Schottky protection, active filters and switching regulators. The NTM4935NR2G is a MOSFET that operates with a depletion mode. Depletion mode transistors are normally turned on, but can be turned off using an external voltage. This makes them ideal for applications where switching between power states is required. The device has a low on-resistance of 2.4 Ohms, which makes it suitable for efficient power conversion. Its low gate threshold makes it suitable for use in low noise analog applications. The NTM4935NR2G is constructed using a gallium arsenide process, which ensures low switching times and high frequencies. The device has a low gate-source capacitance of 13pF for faster switching. The device also has very low Miller capacitance and low gate-drain capacitance for improved noise performance in analog applications. The device is RoHS compliant and has a maximum operating temperature of 125°C. To operate the NTM4935NR2G, a low-level signal is applied to the gate of the device to turn it on and the drain current is then allowed to flow. To turn the device off, a higher-level signal is applied to the gate. The device then behaves as an open switch, preventing the flow of current. The device features FET-level signal processing, which allows for very fast switching times and low-frequency signal processing.In summary, the NTM4935NR2G is an N-channel enhancement mode gallium arsenide field-effect transistor or MOSFET. It is commonly used for linear power supply and control applications, DC-DC converters, Schottky protection, active filters, and switching regulators. The device is capable of operating over a wide range of drain-source voltage and can provide very low on-resistance and gate-source capacitance. The device is suitable for both analog and digital applications, has a low-noise performance, and is RoHS compliant.

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