Allicdata Part #: | NTMS4101PR2OS-ND |
Manufacturer Part#: |
NTMS4101PR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 6.9A 8-SOIC |
More Detail: | P-Channel 20V 6.9A (Ta) 1.38W (Tj) Surface Mount 8... |
DataSheet: | NTMS4101PR2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.38W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 6.9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.9A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMS4101PR2 is a single N-channel enhancement-mode power MOSFET, which is suitable for various kinds of applications that require low on-resistance and low gate charge. As such, it is part of the new generation of low gate-charge and low on-resistance MOSFETs, and is now widely used in various industries.
The working principle of the NTMS4101PR2 is based on the fact that it is an N-channel, power MOSFET. In this type of MOSFET, the channel region is composed mostly of electrons and the source and drain regions are filled with holes. When the gate voltage is applied, electrons move through the channel region, causing current to flow from the source to the drain. The more the gate voltage is increased, the more current is allowed to flow through the channel, thus allowing more power to be delivered.
The NTMS4101PR2 has a wide range of application fields. One of the most common applications is for DC to DC converters, where it is suitable for synchronous rectification. This type of MOSFET has very low gate charge and low on-resistance, making it ideal for power supply systems. Additionally, the NTMS4101PR2 is also suitable for motor drive applications in digital proportional speed controllers and other electronic drives. It is also used in automotive electronics, such as ignition systems, engine control systems, airbag control systems and electric power steering systems.
In conclusion, the NTMS4101PR2 is an N-channel enhancement-mode power MOSFET, which has a wide range of applications in various industries. It is capable of delivering high power, while having low gate charge and low on-resistance. It is suitable for DC to DC converters, motor drives, automotive electronics and many more applications.
The specific data is subject to PDF, and the above content is for reference
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