NTMS4816NR2G Discrete Semiconductor Products |
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| Allicdata Part #: | NTMS4816NR2GOSTR-ND |
| Manufacturer Part#: |
NTMS4816NR2G |
| Price: | $ 0.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 6.8A 8-SOIC |
| More Detail: | N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8... |
| DataSheet: |  NTMS4816NR2G Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.19000 |
| 10 +: | $ 0.18430 |
| 100 +: | $ 0.18050 |
| 1000 +: | $ 0.17670 |
| 10000 +: | $ 0.17100 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOIC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 780mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18.3nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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NTMS4816NR2G is a silicon N-channel enhancement-mode power field-effect transistor chip. It is a monolithic integrated circuit designed to be operated from a single power supply over a wide range of voltages. This chip is suitable for a wide range of applications including power management, digital signal processing and motor control.The NTMS4816NR2G is a transistor that exploits an inversion layer of a P-type semiconductor between two N-type layers. It has two terminals, a source and a drain. The current that passes through the transistor is controlled by the voltage applied to a third terminal, the gate. The NTMS4816NR2G is an enhancement mode device, meaning that the conductivity of the transistor can be enhanced by the application of a positive gate-source voltage. It can switch from the cutoff mode (almost zero current) to the saturation mode (zero resistance) by varying the gate voltage.The NTMS4816NR2G is specifically designed for applications like DC-DC converters with low output current requirements and protection features like over-temperature and over-current protection. It can be used in a variety of power switches, AC-DC and DC-DC converters for low-voltage supplies up to 60V. Other applications include battery charging, systems where an on/off switch is needed, and as a load switch for controlling the operation of digital circuits.The NTMS4816NR2G integrates ESD protection and it has very fast switching characteristics compared to other FETs. It is available in the industry’s smallest package, SON-3, which is only 3mm x 1.45mm in size. The chip provides very low RDSON and low input capacitance making it ideal for low power applications. It has a typical threshold voltage of ≤1.8V and can handle high drain currents up to 20A.The NTMS4816NR2G also has excellent thermal characteristics, thanks to its ‘thermal speed’ design which reduces the time taken for the chip to cool down. This helps to reduce wasted power and improve circuit efficiency. It features an advanced, multi-layer ESD protection structure which greatly reduces the effects of electrostatic discharge and provides reliable operation over a wide temperature range.The NTMS4816NR2G has a wide variety of features and characteristics which make it ideal for a wide range of applications. Its small size, fast switching times, low power consumption and excellent thermal characteristics ensure that it is the perfect choice for applications which require high efficiency, high reliability and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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