NTMS4939NR2G Allicdata Electronics
Allicdata Part #:

NTMS4939NR2G-ND

Manufacturer Part#:

NTMS4939NR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 8A 8SOIC
More Detail: N-Channel 30V 8A (Ta) 800mW (Ta) Surface Mount 8-S...
DataSheet: NTMS4939NR2G datasheetNTMS4939NR2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTMS4939NR2G is a single N-Channel Enhancement Mode Field Effect Transistor (MOSFET). It belongs to the field of power semiconductors and is used for a variety of different applications. The device typically features a drain current of up to 37 A, which makes it suitable for high power applications. It offers a low gate-source voltage and can operate on both 115V and 230V power supplies.

MOSFETs are widely used as switches due to their low power dissipation, low voltage drop, and high switching speed. The NTMS4939NR2G is commonly used in power supplies, motor drives, and energy conversion systems because of its high current capabilities. Additionally, it is used in audio power amplifiers to provide better sound quality.

The working principle of the MOSFET is based on the control of the device by a high electric field at the gate. When a voltage is applied to the gate, it creates a field of electrons which causes current to flow between the drain and source. This electrical field can be used to control the amount of current flowing through the device.

The device can also be used to amplify signals. When an input signal is applied, the gate voltage will cause a variation in the voltage level at the drain and source. This variation is then used to control the output signal. This type of configuration is commonly used in operational amplifiers and voltage regulators.

The NTMS4939NR2G is built using advanced manufacturing techniques that allow for a very high power density. It features a high operating temperature range of -40°C to 175°C, making it suitable for a wide range of applications. The device also offers a high level of protection against electrical overstress and electrostatic discharge.

In summary, the NTMS4939NR2G is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) which is ideal for high power applications due to its high drain current capabilities and low gate-source voltage. It is commonly used as a switch, in audio power amplifiers, and for signal amplification. The device features a high operating temperature range, a high level of protection, and a high power density.

The specific data is subject to PDF, and the above content is for reference

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