NTMS4801NR2G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	800mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2201pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTMS4801NR2G Application Field and Working Principle

NTMS4801NR2G is an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) belonging to the group of single-gate MOSFETs (SG-MOSFETs). It is well suited for use in a wide range of electrical and electronic applications.SG-MOSFETs are composed of two types of layers: a semiconductor layer and a dielectric layer. The dielectric layer serves as a gate between the source and the drain providing a high degree of control over the flow of electrons.Once the voltage is applied to the gate, the electrons can move freely from the source to the drain through the channel created by the semiconductor layer. The amount of current that will flow through the channel depends on the size of the channel, the size of the gate and the voltage applied to the gate.The NTMS4801NR2G is a popular choice for a variety of applications, including power amplifiers, switching regulators, DC-DC converters, and motor controllers. It is designed to withstand high voltages, and its low on-resistance ensures efficient energy transfer.High power switching applications, such as in solar inverters and motor drives, require the ability to control the current flow through a circuit with fast switching times and low switching losses. This is where the NTMS4801NR2G becomes invaluable. Since this device has a low on-resistance, it can switch rapidly with minimal losses in the circuit.The high current density of the NTMS4801NR2G makes it an ideal choice for high power applications. One of its most intriguing features is its ability to switch rapidly with minimal losses. This device can be used in high-frequency power circuits, such as radio frequency (RF) amplifiers, allowing designers to achieve excellent performance in a compact form factor.In addition to its high switching speed and low losses, the NTMS4801NR2G is also robust, reliable and can be integrated directly into systems. Moreover, this device is relatively cost-effective, making it a highly attractive choice for a wide range of applications.In summary, the NTMS4801NR2G is a highly versatile and powerful single-gate MOSFET that can be used in a wide range of electrical and electronic applications. Its robustness, reliability, low on-resistance and affordable nature make it an attractive choice for many designers.

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