NTMS4920NR2G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	820mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4068pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	58.9nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.3 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The NTMS4920NR2G is a single N-channel enhancement mode MOSFET (or Metal–Oxide–Semiconductor Field-Effect Transistor) used in a wide range of applications. The NTMS4920NR2G is designed for high speed switching in various applications including load switches, level shifters, transmission line driver, small signal amplifiers, and power supplies.</p><p><strong>Application Field</strong></p><p>The NTMS4920NR2G has a low on-state resistance and is highly suited for low voltage and low current applications. It is particularly useful in consumer electronics and computer systems, where the active components in these machines consume considerable amounts of energy and must be managed in a power-efficient way. The MOSFET is also used in automotive applications, where the device must efficiently operate under heavy loads and varied temperature conditions. The NTMS4920NR2G is also suitable for use in compact and portable products to extend battery life.</p><p><strong>Working Principle</strong></p><p>The NTMS4920NR2G is an N-channel MOSFET and the main difference between N-channel and P-channel devices is the charge of semiconductor material on the active area of each device, with N-channel MOSFETs having a negative charge and P-channel MOSFETs having a positive charge. The gate of an N-channel MOSFET is positively charged with respect to the source and the gate of a P-channel MOSFET is negatively charged with respect to the source.</p><p>In an N-channel MOSFET, the negative charge on the semiconductor material of the channel creates a barrier to current flow that can be controlled by the gate. This barrier is known as the ‘depletion layer’, and when the gate voltage is applied to the device, the depletion layer shrinks, allowing a greater current to pass through the device. When the gate voltage is removed, the depletion layer grows and the device turns off.</p><p>The NTMS4920NR2G is a single N-channel MOSFET and its working principle is based on the same principles as those of the N-channel MOSFET device. The device consists of a source and a drain region, with a channel of electrons flowing between the source and drain when the gate voltage is applied. The gate Voltgage controls the width of the channel, which in turn controls the current flow through the device. The NTMS4920NR2G is designed to be used in applications requiring low power consumption, high switching speed and reliable performance.</p><p>In conclusion, the NTMS4920NR2G is a single N-channel enhancement mode MOSFET used in a wide range of applications including consumer electronics, automotive, power supplies and portable products. The working principle of the device is based on the principles of the N-channel MOSFET, where the gate voltage controls the width of the channel, allowing the flow of current between the source and drain.</p>

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