Allicdata Part #: | NVD5413NT4G-ND |
Manufacturer Part#: |
NVD5413NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 30A DPAK |
More Detail: | N-Channel 60V 30A (Tc) 68W (Tc) Surface Mount DPAK |
DataSheet: | NVD5413NT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1725pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NVD5413NT4G is a type of FET (Field Effect Transistor) developed by NXP Semiconductors, a semiconductor company based in the Netherlands. It is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a type of transistor commonly used in integrated circuits. NVD5413NT4G is a single FET, meaning that there is only one source, drain, and gate electrode on the device. It is a low-power device, typically drawing only up to 130 mA of current, making it suitable for many applications.
The NVD5413NT4G is a departure from traditional FETs, featuring a dielectric insulation layer instead of a traditional floating gate. This allows it to operate at higher temperatures, making it well-suited for applications in automotive and industrial temperature ranges. In addition, its wide voltage range makes it suitable for applications in high speed electronic devices and power supplies.
The working principle of the NVD5413NT4G is that of a standard FET. When a voltage is applied between the Source and Drain terminals, a current can flow between them. This current is controlled by the voltage applied to the Gate terminal, as higher gate voltages will increase the current significantly. In addition, the NVD5413NT4G has internal gates that allow for high-frequency switching and low-ground capacitance.
The NVD5413NT4G has various applications in the electronics industry. It is often used in power supplies, as its high switching speed allows for fast regulation of the output voltage, while its low current draw makes it well-suited for low power applications. Additionally, its wide voltage range makes it suitable for use in high speed electronic devices. It can also be used in motor control and switching applications.
The NVD5413NT4G is an excellent choice for applications in many electronic devices. Its high switching speed, low power draw, and wide voltage range make it well-suited for a variety of applications. Additionally, its dielectric insulation layer allows it to operate at higher temperatures, making it useful in automotive and industrial temperature ranges. With its many features and capabilities, the NVD5413NT4G is an excellent component for a wide variety of projects.
The specific data is subject to PDF, and the above content is for reference
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