NVD5C478NLT4G Discrete Semiconductor Products

The NVD5C478NLT4G is an N-Channel Enhancement Mode MOSFET used in a range of applications. It is a surface mount MOSFET in a single package with a gate charge of 4.8nC. This device has an drain-source breakdown voltage of 55V and a maximum drain current of 4.8A. This makes it ideal for applications requiring higher power handling capability. This MOSFET can also be used in linear audio power amplifiers and switches, where higher current and low on-state resistance is needed.

Working Principle of NVD5C478NLT4G

MOSFETs are voltage-controlled current-switched devices. This means that when a voltage is applied to the gate terminal, current can flow from the drain to the source, and that when the voltage is removed from the gate terminal, current will not flow. In the NVD5C478NLT4G, the N-MOSFET is operated in the enhancement-mode, meaning it requires a gate voltage in order for the MOSFET to be "on". This makes it a good device for applications that require precise voltage control of the drain-source current.

The NVD5C478NLT4G is a vertical DMOS transistor developed using advanced vertical DMOS (VDMOS) technology. This technology combines the low resistance of a vertical DMOS with the low input capacitance and high breakdown voltage of a standard MOSFET. This makes the device suitable for medium and high power applications.

Applications of NVD5C478NLT4G

The NVD5C478NLT4G is suitable for a variety of applications that require a high drain-source breakdown voltage and high current handling capability. This makes it particularly suitable for use in linear audio power amplifiers and switches, where higher current and low on-state resistance is needed. It can also be used in low-frequency switching applications such as DC/DC converters, motor drivers, and computer peripherals.

The NVD5C478NLT4G is also suitable for use in high-voltage applications such as motor drives, power supplies, and power converters. The device can be used to switch high-voltage and high-current loads, and it also has low EMI and RDSon characteristics, making it ideal for AC or DC motor control.

Conclusion

The NVD5C478NLT4G is a single-package N-Channel Enhancement Mode MOSFET with a drain-source breakdown voltage of 55V and a maximum drain current of 4.8A. It is suitable for a variety of applications including linear audio power amplifiers and switches, DC/DC converters, motor drivers, and computer peripherals. The device also has low EMI and RDSon characteristics, making it ideal for use in high-voltage applications such as motor drives and power supplies.