NVD5C460NLT4G

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The NVD5C460NLT4G is a single N-Channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) developed by Fairchild Semiconductor. It is a versatile integrated circuit (IC) that can be used in applications ranging from power management and audio/video signals to telecommunications and motor control. The MOSFET is an important element in modern electronic systems, and the NVD5C460NLT4G is designed to provide efficient control of electrical signals in these systems.

The NVD5C460NLT4G is a high-voltage, high-current, high-frequency device. It is capable of operating over a wide range of voltages and frequencies, up to 70V and 4GHz. It has a maximum drain-source resistance (RDS) of just 0.5Ω. The power dissipation of the NVD5C460NLT4G is very low, with a maximum power dissipation (PD) of 1.9W at 70V. This makes it suitable for use in low-power systems, such as portable and battery-powered devices.

The NVD5C460NLT4G is an ideal choice for a wide range of applications. It is suitable for use in power management circuits, such as switching DC power sources and enabling power management systems. In addition, the NVD5C460NLT4G can be used for signal modulation and signal processing. It can also be used for audio/video signal conditioning, such as active filters and equalizers. The NVD5C460NLT4G also provides low gain loss, making it suitable for use in audio/video signal processing, as well as for telecommunication systems.

The NVD5C460NLT4G is a single N-channel N-MOSFET device. It consists of a single drain, source, and gate terminal. The gate terminal is the control element, and it is connected to the current flow. When the gate voltage is increased, the current flow is increased and vice-versa. The maximum gate-source voltage of the NVD5C460NLT4G is 12V, and the maximum drain-source voltage is 25V. In addition, the maximum drain-source current (Id) of the NVD5C460NLT4G is 6A.

The working principle behind the NVD5C460NLT4G is simple. When the gate voltage is increased, it increases the electric field in the channel region between the source and the drain. This increased electric field causes electrons to flow from the source to the drain, which causes a current to flow through the device. The current flow can be controlled by altering the gate voltage, and the voltage drop across the N-Channel MOSFET is determined by the resistance of the gate-source junction (RGS). The current flow can be adjusted by increasing or decreasing the gate voltage.

In summary, the NVD5C460NLT4G is a versatile single N-Channel MOSFET device. It can be used in a wide range of applications, such as power management, signal modulation, audio/video signal conditioning, and telecommunication systems. Its maximum drain-source resistance (RDS) of just 0.5Ω, as well as its maximum power dissipation (PD) of 1.9W at 70V, make it an ideal choice for low-power applications. The working principle behind the NVD5C460NLT4G is simple, and it can be easily adjusted by increasing or decreasing the gate voltage. The NVD5C460NLT4G is an excellent IC for a wide range of applications.

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