NVD5C434NT4G Discrete Semiconductor Products

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NVD5C434NT4G is a maximum breakdown voltage and maximum drain current of N-Channel enhancement mode vertical DMOS field effect transistor specifically designed for use in portable and battery operated applications and is an excellent choice for high efficiency in low voltage operation. It has a low turn-off and low turn-on switching time and features a low output capacitance of 1.2 pF.

NVD5C434NT4G is mainly used in three-terminal adjustable voltage regulators, switching and amplifier circuits, audio, video and telecommunications circuits, automotive applications, switch mode power supply and instrumentation circuits. This type of transistor is suitable for applications, such as DC/DC converters, high efficiency PPG, switch mode power supplies and other power management applications.

NVD5C434NT4G is a single N-Channel enhancement mode vertical DMOSFET with low gate charge. The gate voltage applied to the NVD5C434NT4G is used to control the channel width of the transistor and determine the current flow through the channel. The gate voltage is responsible for controlling the drain current and the gate-source voltage is responsible for the gate-source capacitance.

The NVD5C434NT4G is a four-terminal device consisting of a gate, drain, source and body. The gate and source terminals of the transistor are connected to a voltage source, while the drain and body terminals are connected to a load. The gate terminal is used to control the channel width and the drain terminal is used to measure the current flow through the channel. The source terminal is used to measure the gate-source capacitance and body terminal is used to control the on/off behavior of the transistor. The NVD5C434NT4G is able to handle higher currents than the usual enhancement mode field-effect transistors and can operate at higher voltages than the standard vertical DMOS.

The working principle of NVD5C434NT4G is simple. When the voltage is applied at the gate terminal of the transistor, the voltage will create an electric field across the channel, which will attract electrons from the source region to the drain region, forming a conducting channel by which current will flow from source to drain. As the current flows through the transistor, the voltage applied at the gate terminal of the transistor will increase, increasing the width of the conducting channel. The further increase in the width of the conducting channel will allow more current to flow through the device, thus increasing the transistor’s current gain.

To keep the transistor in an ON or OFF state, the gate terminal must be kept at a constant voltage level. When the voltage applied at the gate terminal remains at a constant voltage, the transistor will remain in its ON or OFF state, depending on the voltage applied at the gate terminal. This is the principle of the NVD5C434NT4G. It is used to control the current flow in the transistor and is widely used in switching and amplifier applications.

The NVD5C434NT4G is an excellent choice for applications requiring high efficiency in low voltage operation. It is also suitable for portable and battery operated applications, as it is capable of handling high currents and voltages. Additionally, the low turn-on and turn-off switching times of the NVD5C434NT4G make it an ideal choice for high frequency switching applications. This single N-Channel enhancement mode vertical DMOSFET is a sophisticated device and can provide reliable operation in the most demanding of digital switching circuits.

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