NVD5C688NLT4G Discrete Semiconductor Products

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The NVD5C688NLT4G is a P channel MOSFET (metal oxide semiconductor field effect transistor) with a single drain and source. It is rated for 12A continuous drain current at 25°C. Additionally, the NVD5C688NLT4G can support up to 80V drain–source voltage and has an extremely fast switching speed with a typical switching time of 4ns. This makes the device well suited for applications such as mobile phones, digital amplifiers, and digital power pre-regulators. It is designed to handle a wide range of electrical signals, allowing designers to tailor the device to their specific needs.

Application Field

The NVD5C688NLT4G is primarily used in high frequency applications such as radio frequency (RF) systems, mobile phones and digital amplifiers. Its ability to switch quickly means that the device can effectively pass power in high frequency applications. Additionally, due to its low on resistance, the NVD5C688NLT4G can be used in systems that require high efficiency or power management.

The NVD5C688NLT4G is also well suited for digital power pre-regulators due to its high input impedances, fast switching time and low on resistance. This makes the device ideal for switching back and forth between power states quickly and efficiently. The device\'s ability to function in a wide range of applications gives designers greater flexibility when designing a system.

Working Principle

The NVD5C688NLT4G is a single P channel MOSFET, meaning that it is an insulated gate field-effect transistor (IGFET) with a gate that is insulated from the underlying semiconductor. It is constructed with a single P channel surrounded by a source and drain. The device operates using two principles: capacitive coupling and electrostatic attraction.

The gate of the NVD5C688NLT4G is insulated from the underlying semiconductor, meaning that it experiences only a small amount of voltage drop. This insulation allows the gate to pass power quickly during the switching process. The device also utilizes capacitive coupling, which transfers the electrical charge from the gate of the NVD5C688NLT4G to the channels on the other side of the device. This capacitive coupling is largely responsible for the device\'s low on-resistance. Electrostatic attraction plays an important role as well, as it is responsible for creating a steady current flow in the drain–source channels.

The NVD5C688NLT4G is rated for a maximum on-resistance (RDSon) of 0.06Ω and a maximum drain-source voltage of 80V. The device also has an extremely fast switching time of 4ns, which makes it well suited for high frequency applications. Additionally, the device is able to handle a wide range of electrical signals, making it suitable for a range of applications.

Conclusion

The NVD5C688NLT4G is a single P channel MOSFET, which is well suited for high frequency applications and digital power pre-regulators. Its ability to switch quickly, low on resistance and wide range of electrical signal compatibility make it a versatile choice for designers. It is an ideal choice for applications that require a high level of power management and efficiency.

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