NVD5C478NT4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 30µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3W (Ta), 30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	840pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	8.4 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta), 43A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionNVD5C478NT4G is a type of field-effect transistor (FET) that is classified as a single MOSFET. It is often used in applications that involve switching and amplification of signals. In order to understand this device and its uses, it is important to consider its characteristics, operating conditions and operating principles.CharacteristicsThe NVD5C478NT4G features a Drain-Source voltage (VDS) of 100V, a Drain-Gate voltage (VGS) of 30V, and a Peak Transconductance (gfs) of 16.3 S. Its Gate-Source breakdown voltage (VGS(th)) is 12V. The device is designed for a power dissipation of 2.5 Watts and its operating temperature range is -55°C to 175°C. It also has an input capacitance of 65 pF and a junction capacitance of 13.7 pF.Operation ConditionsIn order to properly operate the NVD5C478NT4G, certain conditions must be met. The device should be supplied with a VDS of no more than 100V and a VGS of no more than 30V. The power dissipated should not exceed 2.5W, and the operating temperature should remain within the permissable range of -55°C to 175°C.Working PrincipleThe NVD5C478NT4G is a MOSFET device and as such, it operates using the principle of capacitive coupling. This device is able to switch and amplify signals due to the fact that it is able to create an electric field in order to create a conductive path between the source and drain. The electric field is created by an external voltage source which is applied to the gate of the FET. This creates a depletion layer and helps to control the current which flows from source to drain.ConclusionThe NVD5C478NT4G is a single MOSFET that is often used in applications that involve switching and amplifying signals. The device’s characteristics, operating conditions and working principle should be taken into consideration in order to ensure that it is properly operated. If these conditions are met, then this device can effectively switch and amplify signals and can be used in various applications.

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