NVD5867NLT4G

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The NVD5867NLT4G is a high-performance, low-voltage logic level N-channel MOSFET. This MOSFET features an optimized 3V gate with an advanced vertical DMOS structure, which makes it suitable for use in a wide range of applications. The device boasts a low on resistance of 0.05 ohms, a high voltage tolerance of 50V, and an input capacitance of 6 pF. With its high performance and low voltage operation, the NVD5867NLT4G is ideal for use in switching and power management applications.

The NVD5867NLT4G has a variety of potential application fields. Its low on resistance and high voltage tolerance make it suitable for use in high frequency switching applications such as DC/DC converters, power supplies, and voltage regulators. It is also suitable for use in lighting and motor control applications, such as LED lighting, dimming, and HVAC control. Finally, due to its low voltage input capability, the NVD5867NLT4G is also well-suited for use in portable devices such as tablets, laptops, and cell phones.

The NVD5867NLT4G is a three-terminal device with a gate, source, and drain. The gate can either be connected to a source of positive or negative potential. When a positive potential is applied to the gate, the MOSFET is “on” and conducts electricity from the drain to the source. When a negative potential is applied to the gate, the MOSFET is “off” and does not conduct electricity. This on/off switching action allows the NVD5867NLT4G to be used in a variety of applications.

In addition to its switching characteristics, the NVD5867NLT4G’s gate voltage can also be used to control the current passing through the device, allowing it to be used as an adjustable current limiter. By applying a voltage higher than the device’s forward-biased threshold voltage, a current proportional to the gate voltage can be allowed to pass through the device, limited only by the on-resistance of the MOSFET. This makes the NVD5867NLT4G useful for applications such as LED and motor control.

The NVD5867NLT4G is particularly well suited for systems requiring low electrostatic discharge sensitivity due to its low gate-source capacitance of 6 pF. In addition, its high voltage tolerance makes it suitable for use in high voltage switching applications such as high voltage auto switches and DC/DC converters. Finally, its low on-resistance of 0.05 ohms makes it well suited for a variety of power management applications.

In conclusion, the NVD5867NLT4G is a high-performance, low-voltage logic level N-channel MOSFET that can be used in a wide variety of applications. It is suitable for use in high frequency switching applications such as DC/DC converters, as well as LEDand motor control applications. In addition, its low gate-source capacitance of 6 pF and high voltage tolerance make it suitable for use in high voltage switching applications, while its low on resistance makes it well suited for power management applications. As such, the NVD5867NLT4G is an ideal choice for a wide range of applications.

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