| Allicdata Part #: | NVD5C446NT4GOSTR-ND |
| Manufacturer Part#: |
NVD5C446NT4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CHANNEL 40V 101A DPAK |
| More Detail: | N-Channel 40V 101A (Tc) 101W (Tc) Surface Mount DP... |
| DataSheet: |  NVD5C446NT4G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 101W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 34.3nC @ 10V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 101A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The NVD5C446NT4G is a single N-channel field effect transistor (FET) used in a variety of applications. The NVD5C446NT4G is typically used as a driver, switch, or amplifier in electronic circuits. It is also used in remote control applications such as infrared (IR) data transmitters. To understand how the NVD5C446NT4G works, it is important to understand how a FET operates.
A FET is an analog device which controls voltage or current flow by setting an electric field. It is an electronic component that is used to control the flow of electrical current or voltage. FETs are divided into two categories, N-channel and P-channel.
An N-channel FET has a source, gate, and drain. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain. This creates a conducting channel between the source and drain, allowing current to flow. Once the gate voltage is removed, the electric field is no longer present, and the channel is no longer conducting.
The NVD5C446NT4G is an N-channel FET that has an on-resistance of 107 ohms and an off-resistance of 10,000 ohms. The NVD5C446NT4G can operate at a maximum drain-source voltage of 25V, and the gate-source voltage can range from -3V to +3V. The trigger voltage of this FET is approximately 2V.
The NVD5C446NT4G is the perfect choice for applications where high current, low on-resistance, and low driving voltage are desired. It is commonly used in power switching applications, as well as infrared data transmitters. It is also ideal for switching and controlling motors, as well as battery-powered circuits. Due to its low on-resistance, the NVD5C446NT4G is also very energy efficient.
In conclusion, the NVD5C446NT4G is a versatile FET that is suitable for a wide variety of applications. It is capable of handling high currents, has a low on-resistance, and a low trigger voltage. The NVD5C446NT4G can be used in power switching, infrared data transmission, and motor control applications. It is also perfect for battery-powered circuits due to its low power consumption.
The specific data is subject to PDF, and the above content is for reference
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