Allicdata Part #: | NVD5C486NT4G-ND |
Manufacturer Part#: |
NVD5C486NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 40V DPAK EXPANSION AND |
More Detail: | N-Channel 40V 9.2A (Ta), 23A (Tc) 2.9W (Ta), 18.3W... |
DataSheet: | NVD5C486NT4G Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.9W (Ta), 18.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 4V @ 20µA |
Rds On (Max) @ Id, Vgs: | 17.9 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.2A (Ta), 23A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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NVD5C486NT4G is a high performance dual N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in the medium voltage range. It was manufactured by onsemi and it is one of the most modern technologies in the field of differential-mode semiconductor devices. NVD5C486NT4G is designed to operate with a maximum channel-drain voltage of 500 V, and a maximum channel-source voltage of -30V. Its peak current rating is 140 A which is a big advantage over traditional MOSFETs.
NVD5C486NT4G is capable of handling large amounts of power and its applications are various. It is ideal for high wattage applications such as power amplifiers and power converters. There are many applications, where NVD5C486NT4G can provide high power, low RDSON and low EMI. It can also be used in frequency converters, motor controllers and other motor control applications.
In order to understand how NVD5C486NT4G works, let’s discuss how normal MOSFETS work. A MOSFET is an insulated-gate field-effect transistor that uses a metal-oxide-semiconductor as its gate. It works by "pushing" the electric field from the gate to the channel region, which creates an electric current. When no voltage is applied to the gate, there is no current flow through the channel. When a voltage is applied, the current flows through the channel and can be used for various applications.
The NVD5C486NT4G MOSFET utilizes a curved gate design that allows it to control the voltage and current flow more accurately. It also has a higher current rating and lower on-resistance than traditional MOSFETs. This makes it ideal for high wattage applications. The NVD5C486NT4G provides an easier and more reliable operation in systems where power rating is of importance. It features a rated drain-source voltage of 500V, an operating drain-sourceance of 14mΩ, and a maximum power rating of 140A.
NVD5C486NT4G is a great choice for applications that require high power handling, low RDSON and low EMI. It has a wide range of applications in motor control, power converters, frequency converters and other power-dependent products. Its design is suitable for switching and linear mode applications, as well as in high wattage applications such as power amplifiers and power converters. Its high current rating makes it suitable for various applications and provides a reliable operation in high wattage applications.
NVD5C486NT4G is the ideal choice for applications that require high power handling, low RDSON, low EMI and high current rating. Its design and features make it suitable for a wide range of applications in motor control, power converters, frequency converters, and other power-dependent products. With its advanced designs and features, NVD5C486NT4G is one of the best options for high wattage applications.
The specific data is subject to PDF, and the above content is for reference
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