NVD5C454NT4G Allicdata Electronics

NVD5C454NT4G Discrete Semiconductor Products

Allicdata Part #:

NVD5C454NT4GOSTR-ND

Manufacturer Part#:

NVD5C454NT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: T6 40V DPAK EXPANSION AND
More Detail: N-Channel 40V 19A (Ta), 82A (Tc) 3.1W (Ta), 56W (T...
DataSheet: NVD5C454NT4G datasheetNVD5C454NT4G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 70µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVD5C454NT4G is a single N-channel enhancement mode power field effect transistor (FET) which is mainly used for various applications such as switching, synchronous rectification, protection and load switch. This device is designed using advanced trench MOSFET technology to achieve extremely low on-resistance, excellent switching performance, and high temperature performance. It has a wide drain-source breakdown voltage range between -320V and -450V and a maximum drain-source voltage of -600V. Additionally, it also features a low gate threshold voltage, low gate input capacitance, and a low gate resistance.

The NVD5C454NT4G is a voltage-controlled device used in applications such as high-side switching, synchronous rectification, motor control, and protection circuits. The device is composed of an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that controls the flow of electrons through it by a gate. It is operated in enhancement mode, which means that by applying a positive voltage to the gate, the N-channel MOSFET will open to allow current to flow. The threshold voltage of the N-channel MOSFET is the minimum voltage required for the device to turn on, and is usually between 1V and 4V.

The NVD5C454NT4G has a low threshold voltage of 2.6V, making it ideal for low-voltage applications. Additionally, it features a maximum drain-source voltage of 600V, a drain current rating of 16A, and a maximum on-resistance of 0.6 milliohms. The device also features a low gate input capacitance of 5pF and a low gate resistance of 0.3 ohms. The operating temperature range of the NVD5C454NT4G is between -55?C to 175?C, making it suitable for a wide range of applications.

The NVD5C454NT4G is mainly used in high-side switching, synchronous rectification, motor control and protection circuits. It is ideal for controlling the high-side switching of motors, which requires a high voltage and a high current. It features a low on-resistance which is ideal for high-current applications and it also has a low gate input capacitance, meaning that it does not require a large amount of energy to turn on. Additionally, it also has a low gate-resistance, meaning that it can switch quickly and with minimal losses. Furthermore, it has a wide temperature range, which makes it suitable for use in a range of different applications.

The NVD5C454NT4G is an important component in power electronics and it is used in many different types of applications. It is used to provide high-side switching and protection, which is essential in applications such as motor control and power supplies. Additionally, it has a low input capacitance and a low gate resistance, which make it ideal for switching applications and for applications requiring fast switching times. It also has a wide temperature range, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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