Allicdata Part #: | NVD5802NT4G-ND |
Manufacturer Part#: |
NVD5802NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 16.4A DPAK |
More Detail: | N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.... |
DataSheet: | NVD5802NT4G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 16.4A (Ta), 101A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5300pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 93.75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NVD5802NT4G is a single FET (Field Effect Transistor) semiconductor device. It is manufactured using advanced semiconductor technology including silicon-on-insulator and C4 connections. This technology provides superior performance in various conditions and environments, making NVD5802NT4G an ideal choice for a wide range of applications from consumer electronics to industrial and military uses. The device has a very low power consumption and is able to handle high power loads. The device also has low threshold voltage, enabling the device to be more efficient in applications where low voltage is needed.
In consumer electronics, NVD5802NT4G is used in a wide range of applications where it is used to help protect integrated circuits (ICs) from damage. This protection is accomplished by the FET’s ability to allow current to pass while preventing excessive current from flowing back into the IC. This protection is particularly valuable when integrated circuits are used at higher voltages and currents, such as in mobile phones, laptops, and high-end gaming systems.
In industrial and military applications, NVD5802NT4G is used to protect delicate equipment and circuitry against extremely high power flows. It is often used in situations where the equipment being used must remain reliable in challenging conditions. The FET’s ability to dissipate power without creating significant amounts of heat makes it an ideal solution for these types of applications.
The working principle of NVD5802NT4G is based on the fact that it is a transistor, which is an electrical component that can be used to control the current in a circuit. A transistor consists of three terminals, the source, gate, and drain. The source of the transistor is the input power source, which is connected to the gate. The gate serves as the control point of the circuit and can open or close the circuit depending on the voltage applied to it through the control signal. When the gate voltage reaches a certain level, the current will start to flow through the drain. The current can then be increased by increasing the gate voltage, or it can be decreased by reducing the gate voltage.
NVD5802NT4G is a valuable component because it can be used to control the current in the circuit, protecting other components like ICs. This makes it an ideal choice in a variety of applications where integrated circuits are used and when power levels can be unpredictable. It is also a cost-effective solution due to its low power consumption and small size.
The specific data is subject to PDF, and the above content is for reference
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