NVD5484NLT4G-VF01

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.9W (Ta), 100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1410pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	48nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	17 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.7A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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Introduction to the NVD5484NLT4G-VF01

The NVD5484NLT4G-VF01 is a high power, low resistance, MOSFET with N-channel depletion type. It is designed for operations at an operating voltage from 5V to 35V and can handle up to 150A of continuous current. This makes it ideal for power control and high-frequency switching applications.

Features

The NVD5484NLT4G-VF01 has a wide range of features that make this MOSFET suitable for many different applications. It is the first-ever MOSFET to feature a new vertical gate trench structure. This structure has been developed to help reduce power losses and enable high-frequency switching capabilities.The device also offers a low Rdson (resistance) of only 2.5mΩ, allowing for increased efficiency in power control applications. It also has a wide temperature range, with an operating temperature of -55°C to +150°C. In addition to its features, the NVD5484NLT4G-VF01 is also compatible with various types of mounting prevent mechnisms, including SMT and through hole transient voltage suppressors.

Application Fields

The wide range of features makes the NVD5484NLT4G-VF01 ideal for applications such as DC/DC converters, motor control circuits, automotive body electronics and other power control applications.DC/DC converters require precise control of the output voltage and current from the power source. The low Rdson and high current capability of the NVD5484NLT4G-VF01 make it perfect for this application. It is also compatible with a wide range of mounting technology, allowing for easier installation.The high current capability and wide temperature range make this MOSFET perfect for motor control circuits, allowing for precise control of motors. This makes it ideal for automotive applications, as well as other industrial control applications.Finally, the NVD5484NLT4G-VF01 is also perfect in automotive body electronics applications. Its fast switching speed and low on resistance makes it perfect for applications such as power window and power seat controls, light dimming circuits, bluetooth and infrared signal receivers, and more.

Working Principle

At the heart of the NVD5484NLT4G-VF01 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor uses an applied electric field to control the current and voltage flow through two terminals – the source and the drain. When no voltage is applied, the MOSFET acts as an open switch, allowing no current to flow. When a voltage is applied, however, electrons move through the channel and current begins to flow. The NVD5484NLT4G-VF01 has an uncommon vertical structure, which reduces power losses and allows for a higher current and higher frequency operation. The vertical trench structure also allows for a lower on resistance, resulting in increased efficiency. The NVD5484NLT4G-VF01 is also compatible with various types of mounting mechanisms, including SMT and through hole transient voltage suppressors. This allows the user to customize their setup to their particular application.

Conclusion

The NVD5484NLT4G-VF01 is a versatile high-power, low-resistance, MOSFET designed for power control and high-frequency switching applications. It features a vertical gate trench structure for reduced power losses and increased efficiency. It is an ideal choice for applications such as DC/DC converters, motor control circuits, automotive body electronics, and many others. The low on resistance and wide temperature range make this device perfect for various power control applications.

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