Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 72W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 25V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta), 89A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVD5C648NLT4G Application Field and Working Principle

The NVD5C648NLT4G is a state-of-the-art, high-voltage, logic-level, 1-channel MOSFET that provides outstanding performance and reliability for a wide range of applications. It features up to 25% faster device switching speed and extremely low on-state resistance compared to standard MOSFETs. The NVD5C648NLT4G has a drain-source blocking voltage of 80V, a drain-source on-state resistance of 0.005 Ω, and an operating temperature range of -55 ~ + 125°C. This MOSFET is based on a planar FET process, which is an important part of its performance due to the reduced gate capacitance and on-state resistance. Its structure is composed of concurrent layers of doped regions of silicon to obtain the desired properties, such as high breakdown voltage and fast switching speed. This planar structure provides a source of strong electrical isolation between the gate and the source and drain.The NVD5C648NLT4G is suitable for a wide range of applications, including AC/DC converters, DC/DC converters, motor control, high-efficiency power management, and other power related applications. The NVD5C648NLT4G also has an integrated gate protection feature that helps protect against ESD, EOS, and EMI, as well as providing high-speed switching for enhanced system performance.The NVD5C648NLT4G is a pin-compatible, highly flexible device and can be used in a variety of applications, making it a versatile device for many applications.

Working Principle of the NVD5C648NLT4G

The working principle of the NVD5C648NLT4G is based on the use of a single field-effect transistor (FET), which is also known as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This FET is composed of a drain, source, and gate, and operates by controlling the conductivity of the drain-source channel with a voltage applied to the gate. This voltage creates an electrical field around the gate which creates a virtual barrier between the drain and the source, allowing the flow of electrons to be controlled by the voltage.The NVD5C648NLT4G is a depletion-type MOSFET, meaning that the channel conductivity can be controlled by the voltage on the gate. At low gate potentials, the channel is wide open and the voltage on the drain-source terminal is zero, allowing for maximum conductivity. At higher gate potentials, the channel is increasingly narrowed, which reduces drain-source terminal voltage, and thus reduces channel conductivity.The NVD5C648NLT4G is a logic-level MOSFET, meaning that it can be used to switch devices that operate at digital logic levels of voltage, such as micro-controllers, digital switches, and logic circuits. It is also capable of operating at a high level of efficiency, since it is able to completely turn off the channel at low gate potentials. Furthermore, the NVD5C648NLT4G has a superior high-voltage rating, which allows it to switch devices up to 80V without causing damage.

Conclusion

The NVD5C648NLT4G is a high-performance, low-voltage, 1-channel MOSFET that is suitable for a wide range of applications. Its integrated gate protection feature and low on-state resistance make it an ideal choice for power management and other power related applications. Its planar FET structure provides excellent electrical isolation between the gate and the source and drain. Finally, its high-voltage rating and logic-level operations make it an excellent choice for switching devices that operate at digital logic levels.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description