NVD5862NT4G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVD5862NT4G is a type of discrete single, P-channel, insulated-gate MOSFET (IGFET) produced by N-channel, which is a large, international semiconductor manufacturer. It is a surface mount device, with a mold type of either one half or two half "Super Small Outline Package" (SSOP). The NVD5862NT4G is designed to provide consistently low on-resistance, high forward transfer admittance, and high current carrying capability for its respective voltage-handling parameters.

Power MOSFETs are used in many applications, from basic switching and power conversion to motion control and high performance systems. Such applications make use of the MOSFETs’ inherent high-speed switching capabilities and low on-resistance. The NVD5862NT4G is no exception and its variety of features makes it a perfect solution for applications such as power conversion, motor control, and signal amplification. Its combination of low on-resistance and high forward transfer admittance allows for increased efficiency, while its high current carrying capability makes it suitable for a much wider range of applications than the conventional bipolar junction transistors.

The NVD5862NT4G is designed to operate at a specified voltage rating of 16V, with a drain-source breakdown voltage of 33V and a maximum continuous drain current of 44A. The device has a maximum junction temperature of 150°C and maximum handling power of 440W. It also features a Gate-source voltage rating of ± 18V. This device is thus ideal for use in a variety of low voltage applications, where its low on-resistance, high current carrying capability and robust characteristics makes it a reliable and efficient choice.

The working principle of the NVD5862NT4G and all FETs, in general, is based on the electric field between the gate and source of the FET. This electric field creates an electric current which is used to control the flow of current between the drain and source. When the gate voltage is increased, the electric current is increased, which allows more current to flow between the drain and source of the FET. Thus, in the case of the NVD5862NT4G, increasing the gate voltage to 16V will increase the current flow to a maximum of 44A.

In summary, the NVD5862NT4G is a type of discrete single, P-channel, insulated-gate MOSFET (IGFET). It is designed to provide low on-resistance along with high current carrying capability for low voltage applications, making it a reliable and efficient choice for any application. Furthermore, the working principle of this MOSFET is based on the electric field between the gate and source of the device, which ultimately determines the amount of current that can be passed between the drain and source. These features make the NVD5862NT4G suitable for use in many applications, from basic switching and power conversion to motion control and high performance systems.

The specific data is subject to PDF, and the above content is for reference