Allicdata Part #: | NVD5890NT4G-ND |
Manufacturer Part#: |
NVD5890NT4G |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 100A DPAK |
More Detail: | N-Channel 40V 24A (Ta), 123A (Tc) 4W (Ta), 107W (T... |
DataSheet: | NVD5890NT4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.62587 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 123A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4760pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 4W (Ta), 107W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NVD5890NT4G is a field-effect transistor (FET) used in power amplification and high-frequency switching applications. It is a single N-channel enhancement type device, with a maximum drain-source voltage of 80V and a maximum drain current of 45A. It is designed for applications that require a high level of reliability, such as motor control and power conversion.
The NVD5890NT4G uses a metal-oxide-semiconductor (MOS) transistor structure. This structure uses an insulated gate, rather than an interburst, to control the movement of electrons between the source and drain of the transistor. This allows the device to achieve higher gains than other types of FETs, such as MOSFETs. The device is typically used as a power amplifier in audio and video applications, as well as other high-power applications.
The operating principle of the NVD5890NT4G is fairly straightforward. When a voltage is applied to the gate terminal, it creates a depletion layer in the drain-source region. This depletion layer acts as a resistor, reducing the flow of current. The size of the depletion layer is proportional to the gate voltage, so increasing the gate voltage increases the resistance.
The device has a low gate capacitance, which makes it ideal for high-frequency applications. It has a high operating temperature range of -55°C to 175°C, which makes it suitable for military and industrial applications.
The NVD5890NT4G can be used in a variety of applications, such as in motor control, high-power switch mode power supplies, audio and video amplifiers, RF switching and other power management applications. It is typically used in applications where high power handling is required, and where a high level of reliability and durability is needed.
The NVD5890NT4G is an excellent choice for power amplification and high-frequency switching applications. It has an excellent power handling capability, a low gate capacitance, and a wide operating temperature range. It is also very reliable, making it a great choice for applications that require a high level of reliability and durability.
The specific data is subject to PDF, and the above content is for reference
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