Allicdata Part #: | NVD5414NT4G-VF01-ND |
Manufacturer Part#: |
NVD5414NT4G-VF01 |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 24A DPAK |
More Detail: | N-Channel 60V 24A (Tc) 55W (Tc) Surface Mount DPAK |
DataSheet: | NVD5414NT4G-VF01 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.29400 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The NVD5414NT4G-VF01 is a semiconductor device belonging to the specialized family of transistors known as field effect transistors (FETs); more specifically, this type of device is a metal–oxide–semiconductor field-effect transistor (MOSFET). This type of device is a key component in many types of electronic circuits and is used in many kinds of applications. The NVD5414NT4G-VF01 is commonly used to control the power flow of an electronic circuit, such as a bridge rectifier or an inverter circuit. It is also used in power switching circuits and to control the voltage in an electronic device.
The NVD5414NT4G-VF01 is a single-channel MOSFET device, meaning that it has only one channel through which it can operate. It is typically used in the depletion mode, meaning that the gate-source voltage is below the threshold voltage, and the device is turned off. To turn the device on, the gate-source voltage must be increased to a higher voltage than the threshold voltage.
The main advantage of MOSFETs such as the NVD5414NT4G-VF01 is their low power consumption. This makes them ideal for applications such as low-power circuits, including battery-powered devices, which need to limit their power consumption as much as possible. In addition, these devices are relatively inexpensive and easy to use, making them suitable for a wide range of applications.
The working principle of the NVD5414NT4G-VF01 is fairly straightforward. The device consists of three terminals: the gate, the source, and the drain. When a small current is applied to the gate terminal, it creates an electric field across the oxide layer between the source and the gate. This electric field causes the electrons in the source to be attracted to the gate and the device is turned on. Conversely, when a negative voltage is applied to the gate, the electric field is reversed and the electrons in the source are repelled, thus turning the device off.
The NVD5414NT4G-VF01 can be used in a variety of applications. It is commonly used in power switching circuits, and can be used to convert an AC input voltage to a DC output voltage, thus allowing a device to be powered from an AC outlet. In addition, this device is often used as a voltage regulator in low-power and portable electronic devices, due to its low power consumption. Finally, this device can also be used in motor control, to control the speed and direction of a motor or actuator.
The NVD5414NT4G-VF01 is a versatile and reliable device that is used in many types of circuits and applications. Its low power consumption makes it an ideal choice for low-power and battery-powered circuits, while its simple operation makes it easy to use in any application. In addition, its relatively low cost makes it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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