NVD5C460NT4G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVD5C460NT4G is a single power MOSFET designed for use in commercial and industrial applications.

A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a type of solid-state transistor commonly used in switching and power applications. The MOSFET is an insulated-gate field-effect transistor (IGFET) and is composed of three components: a source, a drain, and a gate. This type of transistor is advantageous in that due to its insulated gate, it is capable of handling larger currents than traditional bipolar junction transistors (BJTs). The NVD5C460NT4G device is optimized for high switching speeds, high power conversion efficiency, and thermal performance.

The NVD5C460NT4G is an integrated power MOSFET commonly used in applications such as motor drives, DC/DC converters, power supplies, and battery chargers. It is designed to handle high current loads of up to 100 A with a low on-state resistance of 4.5 mΩ. It features a single drain and source, and works in conjunction with a gate voltage of 10 V or higher. This device has a maximum drain-source voltage of 600 V and is rated for a continuous drain current of 100 A and a pulsed drain current of 200 A.

The NVD5C460NT4G is designed with a self-protected embedded EMI filter which reduces electromagnetic noise and provides suppression of erroneous coil switching in motor control applications. Due to its low on-state resistance, the device is capable of low conduction losses and high power conversion efficiency for high power applications.

The NVD5C460NT4G’s working principle is based on the voltage-controlled channel between the source and the drain electrodes. When a voltage between the gate and the source is applied, the MOSFET enters a conductive state and current is allowed to flow through the source-drain channel. This is referred to as the “on” state of a MOSFET. When the voltage between the gate and source is removed, the MOSFET enters a non-conductive state, preventing current from flowing through the source-drain channel. This is referred to as the “off” state of a MOSFET.

The NVD5C460NT4G’s low on-state resistance and self-protected embedded EMI filter make it an ideal choice for power applications. Its low conduction losses, high power conversion efficiency, and high switching speed make it a reliable device for a variety of power applications. Furthermore, its rated drain current of 100 A and its drain source voltage of 600 V make it capable of handling high current loads including other power modules in parallel for higher current applications.

The specific data is subject to PDF, and the above content is for reference