SI2333-TP

The SI2333-TP is a single P-Channel power MOSFET developed by Siliconix, now part of Vishay Intertechnology. This MOSFET is specifically aimed toward the industrial, telecommunications and automotive markets. It has very low on-resistance (RDS), fast switching times and is available in surface mount packages, allowing for easy integration into a design. This article will discuss the typical application fields of the SI2333-TP, in addition to its working principle.

Typical Application Fields

The SI2333-TP is suited for a wide range of applications. These can span from high frequency switching applications to low on resistance (RDS) requirements. It is also suitable for battery protection, load switching, current level detection and even DC/DC converters or charge pump circuits. Generally, any place there is a need for low-level on-resistance and fast switching times, the SI2333-TP can be a good fit.

The SI2333-TP MOSFET is available in surface mount packages, which allows for easy integration into any design. It enjoys wide approval from numerous industry-standard databases (RoHS, VDE, UL, etc.), ensuring it meets all the safety and compliance requirements of the target applications. Moreover, the MOSFET is rated with an avalanche rating of 1mJ allowing it to tolerate higher energy pulses without degradation or failure.

Working Principle

The basic principle of the MOSFET is to act as a current amplifier. A small electrical signal is applied to the gate-source terminal and this controls the flow of current between the source and drain. The magnitude of the current that can be controlled is much greater than the magnitude of the input signal. The SI2333-TP is a power MOSFET, which means it has a much higher drain-source on-resistance (RDS(ON)) than a standard MOSFET. This means that it can handle higher currents, typically in the region of 100A.

The main characteristic that makes the SI2333-TP attractive to engineers is its low on-resistance (RDS(ON)). This is a key factor for designs that need to losslessly switch high current with minimal power dissipation. The RDS(ON) of the SI2333-TP is stated as 14mΩ at VGS=4.5V, meaning it can handle currents as high as 100A with a minimal drop across its terminals.

The SI2333-TP also has a very fast switch speed. This is due to its low gate capacitance (Cgs) and excellent gate charge (Qgs). This means that the MOSFET can be switched on or off very quickly compared to other power MOSFETs, while keeping its switching losses to a minimum. The fast switch times of the SI2333-TP make it ideal for applications where a high current needs to be switched quickly.

Conclusion

The SI2333-TP is a single P-Channel power MOSFET developed by Siliconix, now part of Vishay Intertechnology. It is designed for industries with demanding high frequency switching needs, as well as for applications requiring low on-resistance (RDS). Its low RDS(ON), fast switch speed, and surface mount packages make it an attractive option for engineers. The SI2333-TP enjoys numerous industry approvals, with its avalanche rating of 1mJ allowing it to tolerate higher energy pulses without degradation or failure. By understanding its application field and working principle, engineers can better understand the potential use cases for this MOSFET.