SI2304DS,215 Allicdata Electronics
Allicdata Part #:

568-5957-2-ND

Manufacturer Part#:

SI2304DS,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 1.7A SOT23
More Detail: N-Channel 30V 1.7A (Tc) 830mW (Tc) Surface Mount T...
DataSheet: SI2304DS,215 datasheetSI2304DS,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 830mW (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI2304DS,215 is a silicon-based FET device manufactured by Vishay Semiconductor. It is a single, depletion-mode, N-channel MOSFET transistor. It is mainly used as an electronic switch or as a voltage-variable resistor in various electronic circuits and applications. The following sections discuss the application, working principle, and features of the SI2304DS,215.

The SI2304DS,215 is mainly used in low voltage and low current applications, such as for switching power supplies, amplifiers, voltage converters, and voltage regulators. It is suitable for use in logic control circuits and in computer systems. It is also suitable for use in portable equipment, such as mobile phones and laptops. The device can be used as a switch in various applications, including in motor control, power supplies, and amplifiers.

The SI2304DS,215 works on the principle of the MOSFET, which is a type of transistor that utilizes the electrons flowing across a dielectric layer between two materials, the gate and the source, to control the voltage at the drain end of the transistor.When a positive potential is applied to the gate of the transistor, it allows the flow of electrons from the source to the drain, thus enabling the device to act as an on/off switch. The gate of the device also functions as a voltage-variable resistor, as it can control the current flowing through the transistor.

The SI2304DS,215 has several features that make it suitable for a variety of applications. It has a low on-resistance of 0.27 ohms and a low gate-threshold voltage of 1.2V. It also has a maximum drain-to-source voltage of 30V and a maximum drain current of 1.8A. The device is also reverse-polarity protected and can operate over a wide range of temperature ranges. The device is also RoHS compliant.

In conclusion, the SI2304DS,215 is a silicon-based FET device that is mainly used as an electronic switch or voltage-variable resistor in various electronic circuits and applications. The device works on the principle of the MOSFET, which allows the flow of electrons from the source to the drain. It has several features, such as a low on-resistance, a low gate-threshold voltage, and a wide operating temperature range. It is suitable for use in various applications, such as in switching power supplies, amplifiers, voltage converters, voltage regulators, logic control circuits, and computer systems.

The specific data is subject to PDF, and the above content is for reference

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