
Allicdata Part #: | 568-5957-2-ND |
Manufacturer Part#: |
SI2304DS,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 1.7A SOT23 |
More Detail: | N-Channel 30V 1.7A (Tc) 830mW (Tc) Surface Mount T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 195pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 117 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI2304DS,215 is a silicon-based FET device manufactured by Vishay Semiconductor. It is a single, depletion-mode, N-channel MOSFET transistor. It is mainly used as an electronic switch or as a voltage-variable resistor in various electronic circuits and applications. The following sections discuss the application, working principle, and features of the SI2304DS,215.
The SI2304DS,215 is mainly used in low voltage and low current applications, such as for switching power supplies, amplifiers, voltage converters, and voltage regulators. It is suitable for use in logic control circuits and in computer systems. It is also suitable for use in portable equipment, such as mobile phones and laptops. The device can be used as a switch in various applications, including in motor control, power supplies, and amplifiers.
The SI2304DS,215 works on the principle of the MOSFET, which is a type of transistor that utilizes the electrons flowing across a dielectric layer between two materials, the gate and the source, to control the voltage at the drain end of the transistor.When a positive potential is applied to the gate of the transistor, it allows the flow of electrons from the source to the drain, thus enabling the device to act as an on/off switch. The gate of the device also functions as a voltage-variable resistor, as it can control the current flowing through the transistor.
The SI2304DS,215 has several features that make it suitable for a variety of applications. It has a low on-resistance of 0.27 ohms and a low gate-threshold voltage of 1.2V. It also has a maximum drain-to-source voltage of 30V and a maximum drain current of 1.8A. The device is also reverse-polarity protected and can operate over a wide range of temperature ranges. The device is also RoHS compliant.
In conclusion, the SI2304DS,215 is a silicon-based FET device that is mainly used as an electronic switch or voltage-variable resistor in various electronic circuits and applications. The device works on the principle of the MOSFET, which allows the flow of electrons from the source to the drain. It has several features, such as a low on-resistance, a low gate-threshold voltage, and a wide operating temperature range. It is suitable for use in various applications, such as in switching power supplies, amplifiers, voltage converters, voltage regulators, logic control circuits, and computer systems.
The specific data is subject to PDF, and the above content is for reference
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SI2302DDS-T1-GE3 | Vishay Silic... | -- | 18000 | MOSFET N-CHAN 20V SOT23N-... |
SI2323DS-T1 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.7A SOT2... |
SI2333DS-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 12V 4.1A SOT2... |
SI2308BDS-T1-GE3 | Vishay Silic... | -- | 186000 | MOSFET N-CH 60V 2.3A SOT2... |
SI2312-TP | Micro Commer... | 0.06 $ | 1000 | N-CHANNEL MOSFET, SOT-23 ... |
SI2392DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 3.1A SOT... |
SI2303BDS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2333-TP | Micro Commer... | 0.06 $ | 1000 | P-CHANNEL MOSFET, SOT-23 ... |
SI2303CDS-T1-E3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 30V 2.7A SOT2... |
SI2303BDS-T1 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2351DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.8A SOT2... |
SI2367DS-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 3.8A SOT-... |
SI2343DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3.1A SOT-... |
SI2316DS-T1-GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 30V 2.9A SOT2... |
SI2309CDS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A SOT2... |
SI2325DS-T1-GE3 | Vishay Silic... | -- | 42000 | MOSFET P-CH 150V 0.53A SO... |
SI2333CDS-T1-E3 | Vishay Silic... | -- | 12192 | MOSFET P-CH 12V 7.1A SOT2... |
SI2341DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.5A SOT-... |
SI2306-TP | Micro Commer... | 0.06 $ | 1000 | N-CHANNEL MOSFET, SOT-23 ... |
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SI2304DS,215 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.7A SOT2... |
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SI2343DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3.1A SOT2... |
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