SI2303BDS-T1 Allicdata Electronics
Allicdata Part #:

SI2303BDS-T1-ND

Manufacturer Part#:

SI2303BDS-T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 1.49A SOT23
More Detail: P-Channel 30V 1.49A (Ta) 700mW (Ta) Surface Mount ...
DataSheet: SI2303BDS-T1 datasheetSI2303BDS-T1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A SI2303BDS-T1 is a type of transistor which belongs to the field-effect transistor (FET) family, specifically Single MOSFETs. This type of transistor is used to amplify or switch electronic signals. In order to understand the SI2303BDS-T1’s application and working principle, the following sections will discuss each in detail.

Application field
The SI2303BDS-T1, despite being a single MOSFET, is one of the most versatile and widely-used types of transistors in the electronics industry. It can be used as a switch to control various AC and DC electronic components, such as transformers or relays, or as an amplifier to boost signals for a variety of applications. It can also be used for signal conditioning, due to its low on-resistance and high current ratings. Additionally, the SI2303BDS-T1 is particularly suitable for application in automotive, medical, and communication systems due to its anti-surge, temperature, and ESD protection features.

Working principle
The SI2303BDS-T1 is a voltage-controlled voltage-driven field-effect transistor. This type of transistor works by modulating the current flow between its drain and source connections. This is done by applying a voltage to the gate terminal, which then modulates the width of the channel between the drain and source terminals. As the voltage at the gate increases, the channel becomes wider and more current can flow through the transistor, making it an amplifier. Conversely, as the voltage decreases, the channel narrows and less current can flow, making it a switch. Thus, depending on the amount of voltage applied to the gate, the current flow can be regulated as desired.

The ability of the SI2303BDS-T1 to be used as both an amplifier and a switch makes it a highly versatile component. Its other features, such as the anti-surge and ESD protection, make it even more robust and reliable, which makes it the perfect transistor for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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